Effect of Temperature on Growth of Polycrystalline Silicon Thin Films Prepared via RTCVD

Yun-fei Hu,Hui Shen,Xi-yun Liu,Zhi-qiu Guo,Zheng-yi Liu

DOI: https://doi.org/10.3321/j.issn:1000-565X.2007.04.016

2007-01-01

Abstract:Polycrystalline silicon (poly-Si) thin films solar cells have been one of the thin-film solar cells with the greatest development potential. In the development of poly-Si thin-film solar cells, a key point is to fast deposit large and high-quality poly-Si thin films. Poly-Si thin films with large grains were prepared via the rapid thermal-chemical vapor deposition (RTCVD), with SiHCl 3 as the silicon source and B 2H 6 as the doping gas. Thin films with a thickness of 30-40 μm and a deposition rate of 3-7 μm/min were thus obtained. The effect of deposition temperature on the growth rate of the film and the microstructure of the crystal was then investigated. It is concluded that, with the increase in deposition temperature from 900 to 1170°C, the average growth rate approximately exhibits a monotonous increase, the average crystal size increases from less than 3 μm at 900°C to more than 30 μm at 1170°C, and the deposition is controlled by the surface reaction mechanism. Moreover, the poly-Si thin films tend to grow in[220] direction at low temperature while in[111] preferred orientation when the temperature reaches 1170°C.