Abstract:Residual stresses develop in the sol-gel-derived ferroelectric thin films during the transformation of the metal-organic gel to the metal oxide upon thermal treatment and due to the thermal and elastic mismatch between the Pb(Zrx,Ti1−x)O3 (PZT) film and the substrate materials during cooling. In this study, residual stresses were determined using the wafer curvature method after the deposition of multilayer PZT film on platinized (100) silicon wafers. A multilayer model for stress analysis was used to calculate the residual stress in PZT films of three different compositions: x=0.4, x=0.52, and x=0.6. Orientation dependent residual stresses were found in compositions containing the tetragonal phase, with x=0.4 and x=0.52. Depending on the fraction of (100) orientated domains low compressive or low tensile stress was found in Pb(Zr0.4Ti0.6)O3 (PZT 40∕60). Higher residual stress was found in PZT films consisting of only rhombohedral crystallographic structure (PZT 60∕40) while the residual stress in PZT films with morphotropic boundary composition (PZT 52∕48) was significantly dependent on the film orientation and the phase composition and could range from 17to90MPa. The effect of the film orientation on residual stress was found to be a function of the anisotropic thermal expansion coefficient of PZT. The contribution of the thermal and elastic properties of materials to the total wafer curvature was investigated and discussed. Finally, the residual stress results calculated with the four layer model were compared to the results calculated using the Stoney equation.

Effect of Annealing Conditions on Residual Stress in Sol-Gel-derived Pb(Zr0.52Ti0.48)O3 Film

Effect of reannealing treatment in alternating electric field on residual strain in sol–gel derived Pb(Zr,Ti)O3 film

Development of Residual Stress in Sol-Gel Derived Pb(Zr,Ti)O-3 Films: an Experimental Study

Effectof annealing temperature onthe propertiesof PZTferroelectric thinfilms inthe processof RTPwithSol-gel method

Texture Evolution of Sol-Gel-Derived Pb(Zr,Ti)O-3 Film on Platinum Bottom Electrode with Different Annealing Process

Study of annealed sol-gel PZT films prepared by reversed-dip-coating

Effect of Annealing Temperature on Ferroelectric Electron Emission of Sol–gel PZT Films

Effect of Annealing Temperature on Properties of Barium Zirconium Titanate Thin Films Deposited by Sol-Gel Method

Effect Of Annealing Temperature On Properties Of Sputtered Pzt Thin Films

Evaluation of texture in Pb(Zr0.52Ti0.48)O 3 films prepared by sol-gel route

Effects of annealing treatment on fatigue recovery of lead zirconate titanate thin films

Growth and ferroelectric properties of sol-gel derived Pb(Zr,Ti)O3 using inorganic zirconium precursor

Influence of Postdeposition Annealing on Crystallinity of Zinc Oxide Films

Effect of annealing temperature on the energy storage properties of Ba(Zr0.35Ti0.65)O3 thin films prepared by sol–gel method

Influence of Phase Transition Induced by Residual Stress on Ferroelectric Properties of Highly (100)-Oriented Pb(Zr0.52Ti0.48)O3 Thin Films

PZT thin films with preferred-orientation induced by external stress

Crystallization Behavior of PZT Film Prepared by Sol–gel Route

The Effect of Annealing on the Crystallinity of ZnO Films

Evaluation of Texture in Pb(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub> Films Prepared by Sol-Gel Route

A Facile Hot Plate Annealing at Low Temperature of Pb(Zr0.52Ti0.48)O3 Thin Films by Sol–gel Method and Their Ferroelectric Properties

Effects of Pb Excess and Temperature on Polarization Fatigue in Sol-Gel Derived Pb(Zr0.3ti0.7)O3 Thin Films