Abstract:A new analytical current-voltage (I-V) model for submicrometer and deep-submicrometer metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed based on a newly developed charge-control model for the metal-oxide-semiconductor structure. Threshold-voltage shift due to quantum mechanical effects, finite inversion layer thickness effects (inversion layer capacitance), as well as increased depletion layer charge density after the strong inversion point are incorporated in the model. Inversion layer charge density with respect to the gate voltage from depletion through weak inversion to strong inversion regions with smooth transition between different regions is given by one expression. Two-dimensional short channel effects such as channel length modulation, drain-induced barrier lowering, mobility degradation, and carrier velocity saturation, as well as polysilicon depletion effects are included in the I-V model. Model results are compared with both numerical results of carrier sheet density and surface potential in the channel, and experimental results of I-V data for submicrometer and deep-submicrometer MOSFETs down to 0.09-/spl mu/m effective gate length and the accuracy of the model are demonstrated.

2-D Threshold Voltage Model for Short-Channel MOSFET with Quantum-Mechanical Effects

Threshold voltage correction model for quantum short channel

Threshold Voltage Correction Model For Quantum Short Channel Effects In Decanano-Scaled Mosfets

Threshold Voltage Model for MOSFETs with High-K Gate Dielectrics

A 2D Analytical Model for SCEs in MOSFETs with High-K Gate Dielectric

MOS device threshold voltage model considering quantum mechanical effect including multi-subband occupation

MOS Structure Threshold Voltage Model by Rigorously Considering Quantum Mechanical Effect

Analytical Charge Model for MOSFETs with 2-D Quantum Mechanical Effects

Threshold Voltage Model of a Double-Gate MOSFET with Schottky Source and Drain

Quantum Mechanical Effects on Deep-Submicron MOSFET Subthreshold Characteristics

Threshold Voltage Modeling of Deep-Submicron Double-Gate Fully-Depleted SOI MOSFET

Threshold Voltage Model of Short-Channel FD-SOI MOSFETs With Vertical Gaussian Profile

Electric Potential and Threshold Voltage Models for Double-Gate Schottky-barrier Source/drain MOSFETs

A rigorous analytical model for short-channel junctionless double-gate MOSFETs

A Two-Dimensional Analytical Model for Short Channel Junctionless Double-Gate MOSFETs

Compact I-V Model for Sub-100nm Bulk Silicon MOSFETs

A Physical Threshold Voltage Model of Nanoscale Ultra-thin Body Ultra-thin Box SOI MOSFETs with a Gaussian Doping Profile

Threshold Voltage Model of Total Ionizing Irradiated Short-Channel FD-SOI MOSFETs with Gaussian Doping Profile

Analytic model for subthreshold channel potential and threshold voltage of the Schottky-barrier surrounding-gate MOSFETS

Analytical Charge-Control and I-V Model for Submicrometer Anddeep-Submicrometer MOSFETs Fully Comprising Quantum Mechanical Effects

An Analytical Potential Model of Double-Gate MOSFETs with Schottky Source/Drain