Abstract:Due to the lack of appropriate experimental methods for imaging the evolution of the microstructure of materials at the growth conditions, our understanding of the physical behavior of crystal growth and defect formation during the vapor deposition growth of SiC crystals is still rather limited. In the present work, the vapor deposition growth of SiC crystal on a 4H-SiC substrate has been investigated by the molecular dynamics (MD) computer simulation method. Three different lattice planes of 4H-SiC ((0001), (112-0) and (1-100)) were selected as the surface of the substrate, and three different temperatures for substrate (2200 K, 2300 K and 2400 K) were used in growth simulations. The characteristics of the formation of different polytypes of SiC and dislocations in the grown crystals were examined. The results show that the SiC crystals were grown by a subsurface nucleation and growth mode in the vapor deposition process. For substrates with (0001) plane as the surface, the 3C-SiC single crystal was obtained in the deposited thin film. For substrates with (112-0) or (1-100) plane as the surface, the 4H-SiC single crystal was obtained instead. The temperature of the substrate was found to have a significant effect on the dislocation density generated in the grown crystals. The mechanism for the formation of Frank partial dislocations during the growth of SiC crystals has been analyzed, for which the importance of the diffusivity of atoms on the surface layer in growth has been highlighted, and it gives a good explanation of the temperature effect on dislocation formation in the grown crystals. These results can be helpful for experimental vapor deposition growth of SiC single crystals and epitaxial layers of high quality.

Molecular dynamics study on sputtering growth of Ge/Si(100)2×1 flim under different substrate temperature

Molecular Dynamics Study on Sputtering Growth of Ge/Si(100)2×1 Film

Study of Si and Ge growth on Si(100) surface

Ge Deposited at Different Substrate Temperatures and Its Impact on SiC Films Growth

Simulation study on Si and Ge film growth by cluster deposition

Vapor Deposition Growth of SiC Crystal on 4H-SiC Substrate by Molecular Dynamics Simulation

Molecular-dynamics simulation of Si1-xGex epitaxial growth on Si(1 0 0)

Study of Ge Epitaxial Growth on Si Substrates by Cluster Beam Deposition

The research on growth temperature of Ge/Si thin films grown by magnetron sputtering

Molecular-dynamics Simulation of Germanium Film Growth by Cluster Deposition

Simulation of Surfactant Effects on Growth of Semiconductor Hetero-Epitaxial Sb-Ge/Si(111)

Molecular beam epitaxy growth of Ge on Si(111) substrates covered by a SiO2 mask

Study on crystal growth of Ge/Si quantum dots at different Ge deposition by using magnetron sputtering technique

Effects of Growth Temperature of Si Buffer Layer on Structure and Composition in Gesi Epitaxy Layers on Si Wafer

Fabrication of High Quality Strained SiGe on Si Substrate by RPCVD

Study on the Effect of Substrate Temperature on the Structure of A-Si∶ H/c-Si(100) Thin Film by Molecular Dynamics Simulation

Study of Ge0.96Si0.04 epilayers grown on Si (001) at high temperature

Molecular-dynamics Simulation of Ge Film Growth by Cluster Deposition

Local Structures of Si/Gen/Si(001) Hetero-Structure Films Studied by Grazing Incidence Fluorescence X-ray Absorption Fine Structure

Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate

Surface Diffusion of Si, Ge and C Adatoms on Si (001) Substrate Studied by the Molecular Dynamics Simulation