Formation, Structure, and Phonon Confinement Effect of Nanocrystalline Si1−xGex in SiO2-Si-Ge Cosputtered Films
YM Yang,XL Wu,GG Siu,GS Huang,JC Shen,DS Hu
DOI: https://doi.org/10.1063/1.1772888
IF: 2.877
2004-01-01
Journal of Applied Physics
Abstract:Using magnetron cosputtering of SiO2, Ge, and Si targets, Si-based SiO2:Ge:Si films were fabricated for exploring the influence of Si target proportion (PSi) and annealing temperature (Ta) on formation, local structure, and phonon properties of nanocrystalline Si1−xGex (nc-Si1−xGex). At low PSi and Ta higher than 800°C, no nc-Si1−xGex but a kind of composite nanocrystal consisting of a Ge core, GeSi shell, and amorphous Si outer shell is formed in the SiO2 matrix. At moderate PSi, nc-Si1−xGex begins to be formed at Ta=800°C and coexists with nc-Ge at Ta=1100°C. At high PSi, it was disclosed that both optical phonon frequency and lattice spacing of nc-Si1−xGex increase with raising Ta. The possible origin of this phenomenon is discussed by considering three factors, the phonon confinement, strain effect, and composition variation of nc-Si1−xGex. This work will be helpful in understanding the growth process of ternary GeSiO films and beneficial to further investigations on optical properties of nc-Ge1−xSix in the ternary matrix.