Abstract:The phase transition temperature and crystallization kinetics of phase-change materials (PCMs) are crucial characteristics for their performance, data retention, and reliability in memory devices. Herein, the crystallization behavior and kinetics of a compositionally optimized, N-doped Ge-rich Ge–Sb–Te alloy (GGST) in the slow crystallization regime are systematically investigated using synchrotron x-ray diffraction (XRD) in situ during heat treatment. Uniform thin films (50, 25, 10, and 5 nm) of initially amorphous N-doped GGST are investigated. The specimens were heated up to 450 °C at a rate of 2 °C/min to estimate crystallization onsets by quantifiying the crystallized quantity during material transformation from the XRD patterns. Subsequent isothermal anneals have been performed to assess crystallization behavior and activation energies. Nucleation-controlled crystallization that progresses in two steps is observed, together with the emergence of Ge preceding cubic Ge2Sb2Te5, with a mild dependence of crystallization temperature on film thickness that is inverse to what has been observed in other systems. Ge and GST crystallization may be described occurring in three-time stages: (i) an incubation period; (ii) a fast growth period; and (iii) a very slow-growth period. Very high activation energies (between 3.5 and 4.3 eV) for each phase are found for the incubation time t0. The activation energy for Ge in the fast growth regime is close to the one reported for the crystallization of pure Ge films. In the case of Ge, the incubation time is strongly thickness-dependent, which may have important consequences for the scaling of memories fabricated with this class of materials.

Influence of Substrate Temperature and Film Thickness on Thermal, Electrical, and Structural Properties of HPPMS and DC Magnetron Sputtered Ge Thin Films

Effect of Deposition Temperature on the Electrical Properties of Solid-Phase Crystallized Ge Thin Films

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Chemical Bonding and Optical Properties of Germanium–carbon Alloy Films Prepared by Magnetron Co-Sputtering As a Function of Substrate Temperature

Comparison of magnetic and structural properties of permalloy Ni80Fe20 grown by dc and high power impulse magnetron sputtering

Effects of substrate temperature on structure, thermal stability and mechanical property of a Zr-based metallic glass thin film

Effects of heat treatment on the microstructure and optical properties of sputtered GeO2 thin films

The surface topography, structural and mechanical properties of Ge 1 - XCx films prepared by magnetron co-sputtering

Crystallization kinetics from Ge-rich Ge–Sb–Te thin films: Influence of thickness

The Influence of Sputtering Power on Phase-Change Films

Effect of Film Deposition Rate on the Thermoelectric Output of Tungsten-Rhenium Thin Film Thermocouples by DC Magnetron Sputtering

The Effects of Substrate Temperature on the Composition and IR Transmission Properties of Germanium Carbon Films Deposited by Reactive RF Magnetron Sputtering

Growth Mechanisms and the Effects of Deposition Parameters on the Structure and Properties of High Entropy Film by Magnetron Sputtering

Temperature effect on structural, mechanical properties and corrosion behaviour of CrN thin films deposited by magnetron sputtering

Properties of Al Films Depend on Substrate Temperature by Dc Magnetron Sputter Deposition

The Effect of Thermal Annealing on the Microstructure and Mechanical Properties of Magnetron Sputtered Hydrogenated Amorphous Carbon Films

Influence of magnetic field strength on plasma, microstructure, and mechanical properties of Cr thin films deposited by MPPMS and DOMS

Crystallinity and its influence on physical and magnetic properties in phase change magnetic materials

Low-temperature preparation of polycrystalline germanium thin films by Al-induced crystallization

Mechanical and Environmental Properties of Ge1−xCx Thin Film

Deposition of high entropy alloy sub-surface films on metal substrates via DC magnetron sputtering with a CoCrFeMnNi target