Abstract:Knowledge of the carrier recombination, relaxation, and transport processes in InN materials is essential for determining the applicability of this material system in photonic and electronic applications. In this article, we provide a review of time-resolved spectroscopy experimental techniques and our recent results using these techniques to measure transient processes in InN. Specifically, subpicosecond differential transmission experiments were used to determine the carrier recombination lifetime and the carrier thermalization time of InN. In those experiments, we observed a fast initial hot carrier cooling followed by a slower recombination process. At short times after pulsed excitation, modeling of the observed relaxation suggests that the dominant energy relaxation process is longitudinal optical phonon scattering modified by a strong hot phonon effect at room temperature. An inverse proportionality between the carrier lifetime and the free electron concentration was found. This suggests that donor-like defects or impurities may stimulate the formation of non-radiative recombination centers. Furthermore, we report the measurements of in-plane carrier transport and hole mobility of an InN epilayer by time-resolved transient grating spectroscopy using subpicosecond pulses at 800 nm and ~1900 nm for grating writing and probing, respectively. The ambipolar diffusion coefficient Da = 2.0 cm2/s and hole mobility µh = 39 cm2/Vs at 300 K near the InN surface were determined by monitoring the transient grating kinetics at various grating periods.

Carrier Transport Characteristics in Hexagonal Inn Thin Films

Electrical Properties In Hexagonal Inn Thin Films

Capacitance Characteristics In Inn Thin Films Grown By Reactive Sputtering On Gaas

Optical Studies of High-Field Carrier Transport of InN Thick Film Grown on GaN

Micro-Raman Study of Hexagonal Inn Thin Films Grown by Reactive Sputtering on Gaas

Non-Equilibrium Carrier Transport in A High-Quality Inn Film Grown on Gan

Carrier Recombination, Relaxation, and Transport Dynamics in InN

Hole Transport and Carrier Lifetime in InN Epilayers

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

High Electron Mobility in Nearly-Dislocation-free Hexagonal InN

Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements

ELECTRICAL PROPERTIES OF SEMICONDUCTOR InN

Studies of High Field Transport in a High-Quality InN Film by Ultrafast Raman Spectroscopy

Optical Constants of InN Thin Films on (111) GaAs Grown by Reactive Magnetron Sputtering

Influence of GaN Buffer Layer for InN Growth

Micro-Raman Scattering Study of Hexagonal InGaN Epitaxial Layer

Effect of Grain Boundary Scattering on Electron Mobility of N-Polarity InN Films

Two-Carrier Model-Fitting of Hall Effect in Semiconductors with Dual-Band Occupation: A Case Study in GaN Two-Dimensional Hole Gas

Field-Induced Nonequilibrium Electron Distribution And Electron Transport In A High-Quality Inn Thin Film Grown On Gan

Mosaic Structure and Its Influence on Carrier Mobility in Undoped Hexagonal GaN Thin Film

Ultrafast carrier dynamics in InN epilayers