Abstract:The photoluminescence (PL) and photoluminescence excitation spectra (PLE) of selected InxGa1-xN samples grown by metal organic chemical vapor deposition (MOCVD) have been investigated, and the analysis of structural and optical behaviors has been taken to study the existence of the microstructure InGaN alloys on the basis of X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements.XRD reveals that the sample is a single crystalline InxGa1-xN film formed predominantly in (0002) direction, the In mole composition x in InxGa1-xN film is calculated to be about 0.2 according to the Bragg's angle of InxGa1-xN (0002). The AFM plane-view and 3D images of the selected In0.2Ga0.8N sample show almost uniform island-like microstructure appearing to be composed of granular-crystalline in nanometer scale. The islands composed of the grapes-like have an average height of 10 nm at most and a mean size of 300 nm. The self-organized microstructure appeared to form cone and/or pyramid shape and tended to agglomerate island-like surface with RMS roughness about 10 nm, which attributed to Stranski-Krastanov growth mechanism. The comparison between PLE and PL under different exciting or monitoring energy allows determining the existence of wetting layer (WL)in the sample. The PLE and PL measurements show that the resonant absorption is related to the band gap and wetting layer of the alloy at different exciting and monitoring energy. It has been found that PLE peaks of the In0.2Ga0.8N alloy are dominated by 365 nm and 474 nm with monitoring wavelength 545 nm and 493 nm; the broad 545 nm and narrow 493 nm emission peaks are originated from In(Ga)N wetting layer and InGaN region respectively. The structural and optical analyses suggest that the origin of the exciton localization center is the self-formed islands. Hence, the irrelevancy of the PL spectra to the gap energy was explained in terms of fluctuation resulting from variations in grain size or shape. This type of localized center provides another physical model for the proposed localized states in InxGa1-xN epilayers. Further characterization of the InGaN systems is underway to help fully understand the correlation between the structural and the optical pro-perties of self-organized micro-structure of InGaN system.

Micro-Raman Study of Hexagonal Inn Thin Films Grown by Reactive Sputtering on Gaas

Raman Investigations of Disorder in Inn Thin Films Grown by Reactive Sputtering on Gaas

Micro-Raman Scattering Study of Hexagonal InGaN Epitaxial Layer

High-Precision Determination of Lattice Constants and Structural Characterization of Inn Thin Films

Microstructure and Strain Analysis of GaN Epitaxial Films Using In-Plane Grazing Incidence X-Ray Diffraction

Structural and optical characterization of GaN films grown by metalorganic chemical vapor deposition

Carrier Transport Characteristics in Hexagonal Inn Thin Films

Growth-dependent Phonon Characteristics in InN Thin Films

Preparation and Properties of Gan Micro-Ribbons on Ga-Diffused Si (111) Substrates

Microstructure and Dislocation of Epitaxial Inn Films Revealed by High Resolution X-Ray Diffraction

On the Crystalline Structure, Stoichiometry and Band Gap of Inn Thin Films

Optical Constants of InN Thin Films on (111) GaAs Grown by Reactive Magnetron Sputtering

Correlation Between the Infrared Reflectance and Microstructure of Thin Gallium Nitride Films Grown on Silicon Substrates

Influence of GaN Buffer Layer for InN Growth

Strain And Photoluminescence Characterization Of Cubic (In,Ga)N Films Grown On Gaas(001) Substrates

Electrical Properties In Hexagonal Inn Thin Films

Transmission Electron Microscopy Study of Epitaxial InN Thin Films Grown on C -Plane Sapphire

Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy

Temperature Dependence of Refractive Index in Inn Thin Films Grown by Reactive Sputtering

Investigation on Optical and Micro-structural Properties of Inx Ga1-x N Alloys Grown by MOCVD

Dislocation and elastic strain in an InN film characterized by synchrotron radiation X-ray diffraction and Rutherford backscattering/channeling