CRYSTALLINE SILICON THIN FILM SOLAR CELLS PREPARED BY RAPID THERMAL CHEMICAL VAPOR DEPOSITION ON LOW COST SUBSTRATE

梁宗存,沈辉,胡芸菲,许宁生
DOI: https://doi.org/10.3321/j.issn:0254-0096.2003.z1.009
2003-01-01
Abstract:Epitaxial silicon thin film solar cells were prepared on low cost substrates-silicon sheets from powder (SSP) using rapid thermal chemical vapor deposition (RTCVD) method. The best efficiency of the solar cell on 20 × 20 mm 2 is 7.4%; open circuit voltage is 488 mV; short circuit current is 21.91 mA/cm 2; and filling factor is 0.697. The dark characteristics of the solar cells show that the I 02 and R p are high. The external quantum efficiency and internal quantum efficiency show that the collection efficiency of minority is relatively low at long wavelength, and the maximum of quantum efficiency of the solar cells is about 500 nm.
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