Abstract:Silicon carbonitride (SiCN) films have received considerable attention due to their lower dielectric constant and better etch selectivity than silicon nitride (SiN) films [1]. Therefore, SiCN is replacing SiN in a variety of applications, such as dielectric barriers for copper interconnects or sidewall spacers for self-aligned contacts. SiCN films have been mainly prepared by plasma-enhanced chemical vapor deposition (PECVD) or plasma-enhanced atomic layer deposition (PEALD). However, plasma-based deposition techniques suffer from poor film quality and lack of conformability on high-aspect-ratio patterns. Thermal atomic layer deposition at high process temperatures can deposit high-quality thin films with excellent conformality. However, no studies have been published on thermal ALD in SiCN, while there are a few reports on PEALD in SiCN. In this work, we studied the thermal ALD process of SiCN by alternating exposures to a carbon-containing silicon precursor and NH 3 and compared it with the thermal ALD of SiN processes using carbon-free precursors. Density functional theory (DFT) calculations were used to model and simulate the continuous ligand exchange reactions between the silicon precursor and the substrate surface. The carbon incorporation in the growing film when using carbon-containing precursors was predicted by DFT, which is in good agreement with the experimental observations. Acknowledgments This work was supported by Hansol Chemical Co., Ltd. References [1] C. Jung et al., J. Vac. Sci. Technol. A. 39 (2021).

The Preparation and Characterization of Amorphous SiCN Thin Films

Preparation of AIN Thin Film by DC Sputtering on SiO2/Si and Analysis of Microstructure

STRUCTURAL ANALYSIS OF SiCN FILM PREPARED BY REACTIVE SPUTTERING

Preparation and Analysis of Si3N4 Film

Effect of the deposition conditions on the morphology and bonding structure of SiCN films

Characteristics of SiC_x: H and SiN_x Cy:H Thin Films Deposited by PECVD

Microstructures and Optical Properties of SiNx Films

PREPARATION OF CUBIC C 3 N 4 THIN FILMS BY LOW-PRESSURE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

Spectra Characterization of Silicon Carbonitride Thin Films by Reactive Radio Frequency Sputtering

Synthesis and Characterization of C 3 N 4 Hard Films

Optical & Electronic Properties of Carbon Nitride Thin Films

STRUCTURAL CHARACTERIZATION OF THE CN FILMS

Formation of Cubic C3N4 Thin Films by Plasma Enhanced Chemical Vapor Deposition

Structural and optical properties of α-Si1-xCx:H thin films prepared by RF-PECVD

C3N4 Film Deposited by Synchrotron Radiation Assisted CVD

Influence of Sputtering Process on the Deposition and Optical Properties of Sicn Films

PROPERTIES OF PECVD SiNx FILM FOR SOLAR CELLS

Cn(X) Films Deposited By Laser-Ablation Of Graphite Under Low-Energy Nitrogen-Ion Beam Bombardment

Thermal Atomic Layer Deposition of Silicon Carbonitride: A Density Functional Theory Study

SiCx:H and SiCxNy:H Amorphous Films Prepared from Hexamethyldisilane Vapors

The Formation of SiCN Film on Si Substrate by Constant-Source Diffusion