Abstract:In this work, high concentration erbium doping in silicon-rich SiO2 thin films is demonstrated. Si plus Er dual-implanted thermal SiO2 thin films on Si substrates have been fabricated by using a new method, the metal vapor vacuum arc ion source implantation with relatively low ion energy, strong flux and very high dose. X-Ray photoelectron spectroscopy measurement shows that very high Er concentrations on the surfaces of the samples, corresponding to ∼10 at.% or the doping level of ∼1021 atoms cm−3, are achieved. This value is much higher than that obtained by using other fabrication methods such as the high-energy ion implantation and molecular beam epitaxy. Reflective high-energy electron diffraction, atomic force microscopy and cross-section high-resolution transmission electron microscopy observations show that the excess Si atoms in SiO2 matrix accumulate to form Si clusters and then crystallize gradually into Si nanoparticles embedded in SiO2 films during dual-ion implantation followed by rapid thermal annealing. Er segregation and precipitates are not formed. Photoluminescence at the wavelength of 1.54 μm exhibits very weak temperature dependence due to the introduction of Si nanocrystals into the SiO2 matrix. The 1.54-μm light emission signals from annealed samples decrease by less than a factor of 2 when the measuring temperature increases from 77 K to room temperature.

[Microstructure of Erbium-Doped Si-rich Thermal Oxidation SiO2/Si Luminescent Thin Films].

[Photoluminescence from Si and Er Dual-Implanted Si-rich Thermal Oxidation SiO2/Si Thin Films].

Erbium-doped silicon-rich silicon dioxide/silicon thin films fabricated by metal vapour vacuum arc ion source implantation

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

High concentration erbium doping of silicon-rich SiO2 thin films on silicon

Microstructure and Photoluminescence of Er-Doped Siox Films Synthesized by Ion Beam Assisted Deposition

Photoluminescence Around 1.54μm Wavelength from Erbium-doped Silicon Dependence on Annealing Temperature

Surface Structure and 1.54μm Light Emission of Silicon Plus Erbium Dual-Implanted Thermal SiO_2/Si Thin Film

Formation and Oxidation of Si Nanoclusters in Er-Doped Si-Rich Siox

Control of the Formation and Luminescent Properties of Polymorphic Erbium Silicates on Silicon

Erbium-doped optical waveguide materials based on Si nanocrystals formed by metal vapour vacuum arc ion implantation

Sensitization of Er3+ Ions in Silicon Rich Oxynitride Films: Effect of Thermal Treatments

Photoluminescence of Er-doped SiO2 layers containing Si nanoclusters using dual ion implantation and annealing

Structure and Luminescence Evolution of Annealed Europium-doped Silicon Oxides Films

Correlation Of Efficient Luminescence With Crystal Structures Of Y-Er2si2o7 And Alpha-Er2si2o7 In Er-Doped Silicon Oxide Films

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

INFRARED EMISSION FROM Si IMPLANTED WITH HIGH Er CONCENTRATION

Photoluminescence and Microstructure of Er-Doped A-Si∶h,o Deposited by PECVD *

Effects of Si and Er concentration on 1.54 μm photoluminescence from silica-based thin films

Correlation of Efficient Luminescence with Crystal Structures of Y-Er2si2o7 and Α-Er2si2o7 in Er-doped Silicon Oxide Films

A Novel Approach of Photoluminescence from Erbium-Doped Silicon-Based Materials