Abstract:The defect formation and annealing behavior in as-grown and electron-irradiated 6H-SiC wafers were investigated by variable-energy slow positron beam. For the n-type as-grown samples, it was found that annealing decreased the defect concentration due to recombination with interstitial, and when it was annealed at 1400C for 30 min in vacuum, a 20 nm thick Si layer was found on the top of SiC substrate, which is a direct proof of the Si atom diffusing to the surface when annealed at the high temperature stages. During the high temperature annealing stage, we found an obvious surface effect occurred that induced the higher S parameter close to the surface. This may be caused by the diffusion of the Si atoms to the surface during annealing. After 10 MeV electron irradiation of the n-type 6H-SiC, the positron effective diffusion length decreased from 86.2 nm to 39.1 nm. This shows that there are some defects created in n-type 6H-SiC. But in the p-type 6H-SiC irradiated by 10 MeV electrons, the change is very small. This may be because of the opposite charge of the vacancy defects. The same annealing behavior as that of as-grown 6H-SiC samples was also observed for the 1.8 MeV electron-irradiated 6H-SiC samples except that after being annealed at 300 C, its defect concentration increased. This may be explained as the generation of carbon vacancies, due to either the recombination between divacancies and silicon interstitial, or the charge of the charge states.

Investigation of defects of molecular beam epitaxial Si by slow positron beam

Co-evaporative Sb doping and crystalline quality in Si molecular beam epitaxy

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Molecular Beam Epitaxy and Micro-Structural Characterizations for PbSe Single Crystal Films

Ion implantation associated defects in Si(100) and their annealing behavior studied by slow positron beams

Study on the effects of Si-doping in molecular beam heteroepitaxial β-Ga2O3 films

Observation of regular defects formed on the surface of PbTe thin films grown by molecular beam epitaxy

Observation of Thermal-Misfit Strain Relaxation in A Pbte Semiconductor Grown on Cd0.96zn0.04te(111)

Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy

Study on silicon molecular beam epitaxial layer morphology by scanning tunneling microscopy

Strong surface segregation of Sb atoms at low temperatures during Si molecular beam epitaxy

Investigation of interaction between defects in Si by means of monitoring point defect fluxes

Defect Property in He+ Implanted Silicon Probed by Slow Positron Beam

Suppression of Interfacial Boron Accumulation and Defect Density in Molecular Beam Epitaxial Silicon

Defect Characterization of 6H-Sic Studied by Slow Positron Beam

Effects of Growth Temperature of Si Buffer Layer on Structure and Composition in Gesi Epitaxy Layers on Si Wafer

Interfacial Defects Related to the Substrate Treatment in Molecular Beam Epitaxial Silicon

Effects of Substrate Temperature on Heteroepitaxial Growth of 3C-Sic Thin Films by Mbe on Si(111) Substrate

AN IN-LINE ANALYSIS SYSTEM OF SLOW POSITRON BEAM FOR MOLECULAR BEAM EPITAXY

X ray diffraction study of heavily boron doped Si epilayer after rapid thermal annealing

Ge Deposited at Different Substrate Temperatures and Its Impact on SiC Films Growth