Abstract:Post deposition annealing of molecular layer-deposited (MLD) hafnicone films was examined and compared to that of hafnium oxide atomic layer-deposited (ALD) films. Hafnicone films were deposited using tetrakis(dimethylamido)hafnium (TDMAH), and ethylene glycol and hafnia films were deposited using TDMAH and water at 120 °C. The changes in the properties of the as-deposited hafnicone films with annealing were probed by various techniques and then compared to the as-deposited and annealed ALD hafnia films. In situ X-ray reflectivity indicated a 70% decrease in thickness and ∼100% increase in density upon heating to 400 °C yet the density remained lower than that of hafnia control samples. The largest decreases in thickness of the hafnicone films were observed from 150 to 350 °C. In situ X-ray diffraction indicated an increase in the temperature required for crystallization in the hafnicone films (600 °C) relative to the hafnia films (350 °C). The changes in chemistry of the hafnicone films annealed with and without UV exposure were probed using Fourier transformed infrared spectroscopy and X-ray photoelectron spectroscopy with no significant differences attributed to the UV exposure. The hafnicone films exhibited lower dielectric constants than hafnia control samples over the entire temperature range examined. The CF4/O2 etch rate of the hafnicone films was comparable to the etch rate of hafnia films after annealing at 350 °C. The thermal conductivity of the hafnicone films initially decreased with thermal processing (up to 250 °C) and then increased (350 °C), likely due to porosity generation and subsequent densification, respectively. This work demonstrates that annealing MLD films is a promising strategy for generating thin films with a low density and relative permittivity.

Deposition and Properties of a C:H(N) Films

Investigation of carbon nitride films by cathodic arc evaporation

Nitrogen Modification of Hydrogenated Amorphous Carbon Films

Effect of C 2 H 2 flow rate and a Ti/TiN/TiCN interlayer on the structure, mechanical and tribological properties of a-C:H films deposited using a hybrid PVD/PECVD process with an anode-layer ion source

Structural Investigation And Barrier Properties Of A-C : H Thin Films On Polymer By Pecvd

Deposition of Tetrahedral Hydrogenated Amorphous Carbon Using a Novel Electron Cyclotron Wave Resonance Reactor

Substitutional Nitrogen Doping of Tetrahedral Amorphous Carbon

The microstructural dependence of the opto-electronic properties of nitrogenated hydrogenated amorphous carbon thin films

Hydrogenated amorphous carbon films deposited using plasma enhanced chemical vapor deposition processes

Study on PECVD process and characteristics of SiCxNy:H film

Deposition of hydrogenated amorphous carbon films by CH4/Ar capacitively coupled plasma using tailored voltage waveform discharges

Chemical, Structural, and Electrical Changes in Molecular Layer-Deposited Hafnicone Thin Films after Thermal Processing

Comparative Study Of Mechanical Properties Of A-C : H Films Produced On Tungsten Pre-Implanted Stainless Steel Substrate By Plasma Immersion Ion Implantation And Deposition

Ion-beam-assisted Deposition of CNx Films

Optical & Electronic Properties of Carbon Nitride Thin Films

Nitrogenated Amorphous Carbon As a Semiconductor

Electron energy loss spectroscopy of amorphous carbon nitride

Characterization of sp2/sp3 hybridization ratios of hydrogenated amorphous carbon films deposited in C2H2 inductively coupled plasmas

Characteristics of SiC_x: H and SiN_x Cy:H Thin Films Deposited by PECVD

Mechanical Properties of Tungsten Doped Amorphous Hydrogenated Carbon Films Prepared by Tungsten Plasma Immersion Ion Implantation

Synthesis and Characterization of C 3 N 4 Hard Films