Abstract:Carbon-rich hydrogenated amorphous silicon carbide (a-Si(1-x)C(x):H) films were deposited by plasma enhanced chemical vapor deposition (PECVD) using silane, ethylene and hydrogen as gas sources. The effect of relatively low hydrogen dilution on the properties of as-deposited samples was investigated. A variety of techniques including Scanning Electron Microscope (SEM), Fourier transform infrared spectroscopy (FTIR), Raman scattering (RS), UV-VIS spectrophotometer and photoluminescence (PL) spectroscopy were used to characterize the grown films. The deposition rate decreases with hydrogen dilution. The silicon to carbon ratio increases slightly with the addition of hydrogen. The phenomenon can be attributed to the dissipation of power density caused by hydrogen dilution. Raman G peak position shifting to a lower wave number indicates that hydrogen dilution reduces the size and concentration of sp(2) carbon clusters, which is caused by the etching effect by atomic hydrogen. The optical band gap, which is controlled by the sp(2) carbon clusters and Si/C ratio, changes unmonotonously. The as-deposited samples exhibited a blue-green room-temperature (RT) PL well visible to the naked eye with UV excitation. The PL band can be attributed to the radiative recombination of electron-hole pairs within small sp(2) clusters containing C=C and C-H units in a sp(3) amorphous matrix.

Hydrogenated amorphous carbon films deposited using plasma enhanced chemical vapor deposition processes

Characterization of sp2/sp3 hybridization ratios of hydrogenated amorphous carbon films deposited in C2H2 inductively coupled plasmas

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Structural Investigation And Barrier Properties Of A-C : H Thin Films On Polymer By Pecvd

Etching characteristics of hydrogenated amorphous carbon with different sp 2 /sp 3 hybridization ratios in CF 4 /O 2 plasmas

Gas Barrier Properties of Amorphous Hydrogenated Carbon Films by Plasma -Enhanced CVD

Properties of Tetrahedral Amorphous Carbon Films Deposited in a Filtered Cathodic Arc in the Presence of Hydrogen

Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si

High vapour barrier thin films deposited by R.F.-discarge plasma enhanced CVD

Structure and Properties of Hydrogenated Amorphous Silicon Carbide Thin Films Deposited by Pecvd

Fabrication of amorphous carbon films by using organic hydrocarbon source

Ion-Enhanced Etching Characteristics of sp2-Rich Hydrogenated Amorphous Carbons in CF4 Plasmas and O2 Plasmas

Electron Field Emission Studies from Amorphous Carbon Thin Films

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Deposition of Tetrahedral Hydrogenated Amorphous Carbon Using a Novel Electron Cyclotron Wave Resonance Reactor

Preparation of Amorphous Carbon Films by Layer-By-Layerhydrogen Plasma Annealing Method and Their Luminescence Properties

Improvement of electron field emission from amorphous carbon films due to hydrogen plasma chemical annealing effect

Influence of acetylene to argon flow rate ratios on structure and properties of hydrogenated amorphous carbon films produced on steel substrates by plasma immersion ion implantation and deposition

Deposition of hydrogenated amorphous carbon films by CH4/Ar capacitively coupled plasma using tailored voltage waveform discharges

The effect of hydrogen plasma chemical annealing on electron field emission of amorphous carbon films

The Effect of Radio Frequency Power on the Structural and Optical Properties of A-C:H Films Prepared by PECVD