Abstract:A systematic theoretical study of the electronic and optical properties of Ga$_{1-x}$In$_x$As self-assembled quantum-wires (QWR's) made of short-period superlattices (SPS) with strain-induced lateral ordering is presented. The theory is based on the effective bond-orbital model (EBOM) combined with a valence-force field (VFF) model. Valence-band anisotropy, band mixing, and effects due to local strain distribution at the atomistic level are all taken into account. Several structure models with varying degrees of alloy mixing for lateral modulation are considered. A valence force field model is used to find the equilibrium atomic positions in the QWR structure by minimizing the lattice energy. The strain tensor at each atomic (In or Ga) site is then obtained and included in the calculation of electronic states and optical properties. It is found that different local arrangement of atoms leads to very different strain distribution, which in turn alters the optical properties. In particular, we found that in model structures with thick capping layer the electron and hole are confined in the Ga-rich region and the optical anisotropy can be reversed due to the variation of lateral alloying mixing, while for model structures with thin capping layer the electron and hole are confined in the In-rich region, and the optical anisotropy is much less sensitive to the lateral alloy mixing.

A Optical And Structural Characteristic On Ingaas/Gaas Strained-Layer Superlattice

Analysis Of Gasb/Gaas Superlattices Structure By Photoluminescence And X-Ray Diffraction

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

A Study Of Photoluminesence And Structure Character On Aigaas/Gaas Quantum Well Laser Material

High resolution X-ray diffraction study in InAs/GaSb superlattice

Effects of microscopic strain distribution on Ga(1-x)In(x)As quantum wires grown by strain-induced lateral ordering

Structural and Photoluminescence Properties for Highly Strain-Compensated InGaAs/InAlAs Superlattice

Optical properties of Ge/Si quantum dot superlattices

Effect of Strain on the Growth of InAs/GaSb Superlattices: An X-Ray Study

XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Structural and Optical Characteristics of Al X Ga 1- X N/AlN Superlattice

Structural Ability and Electronic Density of States in (001)- and (111)-Oriented (Gap)1/(inp)1strained-Layer Superlattices

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

Optical Properties of A-Si/a-sin_x Superlattices

Fabrication and Characterization of an InAs(Sb)/InxGa1−xAsySb1−y Type‐II Superlattice

Strain effects on electronic structure and optics of al-Doped monolayer GaS

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Molecular beam epitaxy and optical properties of Zn1-xMnxSe/ZnSe strained-layer superlattices

Structural Characterization of Algan/Gan Superlattices by X-Ray Diffraction and Rutherford Backscattering

Investigation on the Quantum-Well Structure of A Gaas/Al0.3ga0.7as Superlattice Grown on A Misoriented Substrate