Abstract:Thermal decomposition behavior of carbon nitride films prepared via nitrogen ion implantation into graphite in a special mass-separated low-energy ion beam system was investigated using in situ X-ray photoelectron spectrometry (XPS), residual gas analysis and secondary ion mass spectrometry. The XPS N1s line of the CNx films could be deconvoluted into three components, which are denoted as N(I), N(II) and N(III) states with binding energies of ∼398, 400 and 402 eV, respectively. A dramatic evolution of the N1s line during annealing of a room-temperature-implanted CNx film was revealed. Upon heating, the two main components N(I) and N(II) split, and the N(I) and N(III) components attenuated rapidly with increase in temperature until they vanished at 1000 °C, leaving only the N(II) component. The N(II) component exhibited no significant change during heating up to 800 °C but decreased upon further heating to a higher temperature. These results indicate that the N(II) state is more thermally stable than the N(I) state. The assignment of the bonding states between carbon and nitrogen atoms is discussed according to these results and the literature. The desorbed species upon heating of CNx films were monitored using a quadrupole mass spectrometer. The results showed that heating of CNx films led to desorption of N2 and C2N2 molecules. Above 1000 °C, highly significant emission of CN− ions was observed as a result of dissociative negative ionization of desorbing C2N2 molecules.

Nitrogen Ion Implantation into the Amorphous CN Films Prepared with Ion Beam Assisted Deposition

Ion beam synthesis of C-N crystalline film and its analysis

Ion-beam-assisted Deposition of CNx Films

Characteristics of Carbon Nitride Films Synthesized by Single-Source Ion Beam Enhanced Deposition System

Investigation of carbon nitride films by cathodic arc evaporation

Carbon Nitride Films Synthesized By Nh3-Ion-Beam-Assisted Deposition

Crystalline Carbon Nitride Film Synthesized by Ion Beam Assisted Magnetron Sputtering and Thermal Annealing in Nitrogen Gas

Substitutional Nitrogen Doping of Tetrahedral Amorphous Carbon

Observations of Laue pattern and stability of beta -C3N 4 grains

Formation of Β-C3n4 Phase in C-N Films Deposited by Reactive Ionized Cluster Beam Method

Investigation of Carbon Nitride Films Deposited by Ion Beam-Assisted Deposition with Low Bombarding Energy of N Ions

Synthesis and Thermal Decomposition of Carbon Nitride Films Prepared by Nitrogen Ion Implantation into Graphite

Synthesis of Carbon Nitride Films by Arc-Heated Atomic Nitrogen Beams Assisted Pulsed Laser Ablation

Characterization of Carbon Nitride Films Modified by Low Energy Ion-Beam Bombardment

Carbon Nitride Films Synthesized By Combined Ion-Beam And Laser-Ablation Processing

Structural Characterization of Nitrogen Doped Diamond-Like Carbon Films Deposited by Arc Ion Plating

Nitrogen Modification of Hydrogenated Amorphous Carbon Films

Electronic and Mechanical-Properties of Carbon Nitride Films Prepared by Laser-Ablation Graphite under Nitrogen Ion-Beam Bombardment

Investigations on Structural Properties of Carbon Nitride Films Synthesized by Reactive Ionized Cluster Beam Deposition

Experimental Studies of Superhard Materials Carbon Nitride Cnx Prepared by Ion-Beam Synthesis Method

Self-texturing of nitrogenated amorphous carbon thin films for electron field emission