Abstract:Single crystals of 6H–SiC were irradiated at room temperature with 20MeV carbon ions at fluences of 1.5×1015 and 6.0×1015cm−2. Raman measurements were performed to study irradiation induced damage and the in-depth damage profile of SiC. A clear change of damage from the surface down to the stopping region of carbon ions as simulated by SRIM is exhibited. The affected area as detected by Raman is in good agreement with SRIM predictions while a little shallower dpa profile is observed. The partial disorder defined in the present work as a function of depth is demonstrated. A shift of the position of the TO peak towards lower wavenumbers with in-depth damage and then to higher wavenumbers beyond the most damaged region indicates that tensile strain due to defects has a backward V-curve distribution. The damaged layer is subjected to a compressive in-plane stress associated with the out-of-plane strain and the magnitude of this stress also has a backward V-curve depth profile. The evolution of line width of the TO peak with depth clearly shows the density of defects reaches the higher level at the most damaged region. The Raman spectroscopy scanning technique is proved to be a powerful tool for profiling of crystal damage induced by high-energy ion implantation.

Formation of special shaped carrier distribution by MeV multi-energy boron ion implantation into crystal silicon

Research on dopant distribution of multi-energy boron implantations into c-SiC

Carrier-induced formation of electrically active boron-interstitial clusters in irradiated boron-doped silicon

Measurement and Simulation of Ultra-Low-Energy Ion-Solid Interaction Dynamics

Molecular Dynamics Simulations of Vacancy Generation and Migration Near a Monocrystalline Silicon Surface During Energetic Cluster Ion Implantation

Anisotropy Effect of Crater Formation on Single Crystal Silicon Surface under Intense Pulsed Ion Beam Irradiation

Novel microstructures on the surfaces of single crystal silicon irradiated by intense pulsed ion beams

Spectroscopic investigation of quantum confinement effects in ion implanted silicon-on-sapphire films

Carrier Recombination Activities and Structural Properties of Small-Angle Boundaries in Multicrystalline Silicon

Cross-sectional Investigation of Radiation Damage of 2 MeV Proton-Irradiated Silicon Carbide

Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon

Characterization of Radiation Damage Induced by B and B4 Ion Implantation into Silicon

Experimental Observations on Metal-Like Carrier Transport and Mott Hopping Conduction Behaviours in Boron-Doped Si Nanocrystal Multilayers

Critical issues in the formation of quantum computer test structures by ion implantation

Depth Profiling by Raman Spectroscopy of High-Energy Ion Irradiated Silicon Carbide

Depth profiling of the Si ion implantation induced disorder and strain in 4H-SiC and the thermal annealing recovery

Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models

Optimum Annealing Conditions for Boron Implanted Sige Epilayers

Ion-implantation-induced patterns formation on silicon substrates

Ti–Si Compounds Formation by High-Current Ion Implantation

Damage analysis of 25KeV As+ implantation into silicon with large tilt angles