Abstract:Crystalline silicon, including Czochralski silicon (Cz-Si) and multicrystalline silicon (mc-Si),is main material for photovoltaic (PV) industry. How to produce more productive and less expensive crystalline silicon materials is still a big challenge. As we know, the seed-assisted growth method can be used to fabricate cast-mono (CM-Si) silicon by directional solidification, which should combine the both advantages of Cz-Si and mc-Si. However, there remain some problems to be resolved in growing CM-Si silicon ingots, particularly the control of dislocations which are the major and most detrimental defects in CM-Si. They can act as precipitation sites for impurities and thus reduce the carrier lifetime in ingots. Unlike mc-Si ingots, once dislocations are generated in the bottom of CM-Si ingots, they will glide and propagate along the growth direction without hindrance due to the lack of grain boundaries. In this presentation, we review our recent work of how to control defects, specially dislocations, in CM-Si. We induce a grain boundary by adjusting the orientation of seeds which can suppress the generation of dislocations originated from the junction of seeds. We have investigated the effect of Σ5, Σ13a grain boundary relationship at seed junctions of <100>-oriented CM-Si on dislocations and solar cell performance. We also use <110>-oriented seeds to grow new orientation CM-Si ingots to control the generation and propagation of dislocations. The results show that by designing the orientation of seeds, the dislocation density can be decreased and the solar cell efficiency can be improved obviously.

Study on Defects in Large-Flat Sapphire Crystal Grown by Horizontal Directional Solidification

Dislocation Analysis for Large-Sized Sapphire Single Crystal Grown by Sapmac Method

Study on Inclusions in Large Sapphire Optical Crystal Grown by SAPMAC Method

Investigation on Large-Sized Sapphire Crystalline Perfection by X-Ray Double-Crystal Diffraction Method

Thermal Stresses and Cracks During the Growth of Large-sized Sapphire with SAPMAC Method

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Characterization of large-sized Nd:YAG single crystals grown by horizontal directional solidification

Grown-In Defects in Heavily Boron-Doped Czochralski Silicon

Study of the Defects in GaN Epitaxial Films Grown on Sapphire by HVPE

Synchrotron X‐ray Diffraction Studies of Large Sapphire Crystal Grown by Kyropoulos‐like Method

Crystal Defects in Gan on (0001) Sapphire

Study on the technology of large size sapphire single crystal growth by SAPMAC

Crystallisation Surface Microtopography of [1120]- Direction Growth Sapphire Crystal

Investigation of Voids in Large Size CdS Single Crystals Grown by PVT Method

Properties of the structural defects during SiC–crystal–induced crystallization on the solid–liquid interface

(Invited) Defects in Cast-Mono Crystalline Silicon

Study on the Growth Defects of Γ-Lialo2 Crystal

Temperature Field Design, Process Analysis And Control Of Sapphire Crystals By Sapmac Method

Crystallisation surface microtopography of growth sapphire crystal

Growth, quality inspection and ultrasonic vibration cutting of large size sapphire grown by SAPMAC method