Abstract:CuIn(S,Se)2 thin films were prepared by thermal crystallization of co-sputtered Cu-In alloy precursors in S/Se atmosphere. In-depth compositional uniformity is an important prerequisite for obtaining device-quality CuIn(S,Se)2 absorber thin films. In order to figure out the influence of heat treatments on in-depth composition uniformity of CuIn(S,Se)2 thin films, two kinds of reaction temperature profiles were investigated. One process is “one step profile", referring to formation of CuIn(S,Se)2 thin films just at elevated temperature (e.g. 500 °C). The other is “two step profile", which allows for slow diffusion of S and Se elements into the alloy precursors at a low temperature before the formation and re-crystallization of CuIn(S,Se)2 thin films at higher temperature (e.g. first 250 °C then 500 °C). X-ray diffraction studies reveal that there is a discrepancy in the shape of (112) peak. Samples annealed with “one step profile" have splits on (112) peaks, while samples annealed with “two step profile" have relatively symmetrical (112) peaks. Grazing incident X-ray diffraction and energy dispersive spectrum measurements of samples successively etched in bromine methanol show that CuIn(S,Se)2 thin films have better in-depth composition uniformity after “two step profile" annealing. The reaction mechanism during the two thermal processing was also investigated by X-ray diffraction and Raman spectra.

Preparation of CuInSe2 thin films by selenization of co-sputtered Cu-In precursors using rapid thermal processing

Optimization of Fabrication Parameters of CuInSe2 Thin Films by DC-Magnetron Sputtering the Metal Precursor Followed by Selenization

Study of In-Se binaries of In-rich CuInSe 2 thin film prepared by selenization after cosputtering

Synthesis of CuInSe2 thin film by a hydroxides-based deposition process

Growth of CIS Thin Films by Selenization of Co-evaporated Cu-In Alloy

Preparation of In_2S_3 Thin Films by Ultrasonic Spray Pyrolysis and the Influence of Post Rapid Thermal Process

Effect of Temperature on Selenization Process of Metallic Cu–In Alloy Precursors

Effect of Heat Treatment on the Property of Cuins2 Thin Film Prepared by Chemical Bath Deposition

Influence of Thermal Treatments on In-Depth Compositional Uniformity of Cuin(S,Se)(2) Thin Films

Study on How the Content of Selenium in the Precursors Influences the Properties of CuInSe2 Thin Films

Phase transform based on temperature distribution by post-sputtering selenization

P-type CuInSe 2 Thin Films Prepared by Selenization of One-Step Electrodeposited Precursors

Effect of Selenization Temperature on the Crystalline and Electrical Properties of Cu2SnSe3 Thin Films Obtained from Rapid Thermal Process

A Low-Cost Processing of CuIn(SexSi1-x)2 Films: Using Sulfides Nanoparticle Precursors

Study of Cu–In–Ga Precursor for Cu(In,Ga)Se_2 Thin Film Prepared by the Two-Stage Process

Preparation of Homogeneous Polycrystalline CulnSe2 Thin Films by a Two‐Step Chemical‐Vapor‐Transport Process

Research on CuInS2 Thin Films Prepared by One-step Electrodeposition

Investigation into the Thermal Annealing Effects on CuIn(S,Se)2 Thin Films Prepared by Solution Processes

Preparation of Cu(In,Ga)Se2 Thin Film by Solvothermal and Spin-coating Process

Local Segregation in Cu-In Precursors and Its Effects on Microstructures of Selenized Cuinse2 Thin Films

Preparation of Cu(In,Ga)Se2 Thin Film by Non-Vacuum Mechanochemical and Spin-Coating Process