Abstract:Phase-change material (PCM) devices are one of the most mature nonvolatile memories. However, their high power consumption remains a bottleneck problem limiting the data storage density. One may drastically reduce the programming power by patterning the PCM volume down to nanometer scale, but that route incurs a stiff penalty from the tremendous cost associated with the complex nanofabrication protocols required. Instead, here a materials solution to resolve this dilemma is offered. The authors work with memory cells of conventional dimensions, but design/exploit a PCM alloy that decomposes into a heterogeneous network of nanoscale crystalline domains intermixed with amorphous ones. The idea is to confine the subsequent phase-change switching in the interface region of the crystalline nanodomain with its amorphous surrounding, forming/breaking "nano-bridges" that link up the crystalline domains into a conductive path. This conductive-bridge switching mechanism thus only involves nanometer-scale volume in programming, despite of the large areas in contact with the electrodes. The pore-like devices based on spontaneously phase-separated Ge13 Sb71 O16 alloy enable a record-low programming energy, down to a few tens of femtojoule. The new PCM/fabrication is fully compatible with the current 3D integration technology, adding no expenses or difficulty in processing.

A Write Driver For Phase Change Memory Based On Programming Current/Voltage

Optimization Of Write Operation In Phase Change Memory

Speeding Up the Write Operation for Multi-Level Cell Phase Change Memory with Programmable Ramp-Down Current Pulses.

Phase-Change Memory With Multifin Thin-Film-Transistor Driver Technology

A three-stage-write scheme with flip-bit for PCM main memory

Write Energy Reduction for PCM via Pumping Efficiency Improvement.

Peak-to-average pumping efficiency improvement for charge pump in Phase Change Memories

A Smart Method Of Optimizing The Read/Write Current On Pcm Array

Optimization of Periphery Circuits in a 1K-Bit PCRAM Chip for Highly Reliable Write and Read Operations.

Some Solutions for Writing Current Reduction and High Density Application of Phase Change Memory

An Efficiency-Enhanced 2x/1.5x Sc Charge Pump with Auto-Adjustable Output Regulation for Pcm

Interface Engineering to Enhance Phase Change Memory Programmability

Enhanced Performance of Phase Change Memory Cell Element by Initial Operation and Non-Cumulative Programming

Design of Pulsed Current Source for Set/Reset Operation of Phase-change Memory Cells

Enhanced Read Performance For Phase Change Memory Using A Reference Column

Write Reconstruction for Write Throughput Improvement on Mlc Pcm Based Main Memory

Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power

RESET Current Reduction for Phase Change Memory Based on Standard 0.13-Μm CMOS Technology

A Software-hardware Collaborating Framework for Wear Leveling on Phase Change Memory

A Self-Adaptive Write Driver with Fast Termination of Step-Up Pulse for Reram

Read Optimization Enables Ultralow Resistance Drift for Phase Change Memory