Abstract:The switching characteristics of HfOx-based resistive switching random access memory (RRAM) fabricated on front-end of 28 nm standard CMOS process are investigated. The integration of RRAM in the front-end of the CMOS process would minimize the influence of parasitic parameters caused by interconnection line and interlayer oxide on the one transistor one RRAM (1T1R) cells. By adopting pulse program-verify measurement for cycling test, we observe two nonideal phenomena in the commercialized RRAM devices for the first time: 1) low resistance state (LRS) current periodically decays exponentially accompanied by incremental SET pulse number and then increases abruptly when the cycle reaches a certain level and 2) high resistance state (HRS) current fluctuated dramatically during RESET operation. The current fluctuation is mainly due to the generation of new oxygen vacancies (Vos) near the bottom electrode and gap region by electrons trapping/detrapping. By adopting efficient pulse amplitude modulation, the optimized programming strategy has greatly reduced the switching instability and improved the endurance of the devices. Mechanisms of the instability and the optimization strategy are explained by a modified trap-assisted tunneling (TAT) model based on the generation and redistribution of Vos during cycling operations.

Optimization of Periphery Circuits in a 1K-Bit PCRAM Chip for Highly Reliable Write and Read Operations.

Optimization of A Pcram Chip for High-Speed Read and Highly Reliable Reset Operations

Optimal Design of Phase Change Random Access Memory Based on 130nm Cmos Technology

Optimization Of Write Operation In Phase Change Memory

Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

A Self-Adaptive Write Driver with Fast Termination of Step-Up Pulse for Reram

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process

Performance Improvements by SL-Current Limiter and Novel Programming Methods on 16MB RRAM Chip

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Speeding Up the Write Operation for Multi-Level Cell Phase Change Memory with Programmable Ramp-Down Current Pulses.

Progress in Development of Resistive RAM Peripheral Circuit

Design and Realization of a 0.13 Μm 1 Mb Resistive Random Access Memory

A Smart Method Of Optimizing The Read/Write Current On Pcm Array

Reliability-Improved Read Circuit and Self-Terminating Write Circuit for STT-MRAM in 16 nm FinFET

A Write Driver For Phase Change Memory Based On Programming Current/Voltage

Methods to Realize Low-BER and High-Reliability RRAM Chip With Fast Page-Forming Capability

Design and Implementation of a Hybrid, ADC/DAC-Free, Input-Sparsity-Aware, Precision Reconfigurable RRAM Processing-in-Memory Chip

A 0.13 Μm 8 Mb Logic-Based Cu $_{\rm X}$si $_{\rm Y}$o ReRAM with Self-Adaptive Operation for Yield Enhancement and Power Reduction

Reliable 2D Phase Transitions for Low-Noise and Long-Life Memory Programming

Improving the Resistive Switching Reliability Via Controlling the Resistance States of Rram

Self-Terminating Write of Multi-Level Cell ReRAM for Efficient Neuromorphic Computing