Enhancing the Performance of Phase Change Memory for Embedded Applications
Xi Li,Houpeng Chen,Chenchen Xie,Di Cai,Sannian Song,Yifeng Chen,Yu Lei,Min Zhu,Song Zhang
DOI: https://doi.org/10.1002/pssr.201800558
2019-01-01
Abstract:Focusing on meeting the requirements for embedded applications of faster switching and sensing, lower‐power consumption, higher reliability, longer cycling endurance, and higher temperature retention, a lot of progress in the phase change memory (PCM) field has been made, including materials improvement, process optimization, new circuits design, and better operation algorithms. Finally, a 128 MB embedded PCM chip has been demonstrated in 40 nm node. Using carbon‐doped Ge 2 Sb 2 Te 5 phase change material and 3 nm thick heating bottom electrode contact (BEC) with nitride coating, a resistance ratio of more than two orders of magnitude has been achieved in Reset and Set states. Combined with the parasitic matched sensing circuit, optimized ramp‐down SET pulses, adaptive pre‐read and write‐verify methods, and automatic configure and test procedures, the chip exhibits excellent data retention and endurance characteristics with minimum program time of 200 ns, and the Reset/Set resistance ratio becomes even larger after 260 °C soldering test. The estimated data retention time is 10 years at 128 °C, and in a 128 MB full integrated chip the endurance over 10 9 cycles is achieved. It is confirmed that this PCM technology is suitable for embedded applications, especially for those with crucial requirements of high access speed, high thermal stability, and cycling endurance.