Abstract:Due to the scalability and large leakage power, dynamic random-access memory (DRAM) has a lot of challenges in scaling. As an alternative, phase change memory (PCM) has demonstrated promising potential to serve as the main memory in deep submicrometer regime. The broad resistance range of PCM cells enables several cell modes with various densities, pertaining to multiple level cell (MLC), triple state cell (TSC), and single level cell (SLC). High-density mode outperforms low-density ones in terms of capacity and cost-per-bit, but suffers from a weaker cell endurance. Wear leveling strategies are proposed to enhance the memory endurance but encounter more challenges with the aggravating process variation. Due to endurance variations, physical domains are fabricated with irregular tenacity. As a result, balanced write traffic, which is the objective of traditional wear leveling, cannot fully exploit the PCM endurance since the weak parts will be worn out sooner than others. In this paper, considering process variation, we propose a cell morphing based wear leveling scheme. Cell morphing refers to the cell mode transformation between high density (e.g., MLC) and low densities (e.g., TSC and SLC). Instead of redistributing write operations, the proposed wear leveling scheme dynamically transforms weak and frequently written portions into low-density mode for endurance benefits. Multitier cell morphing schemes are proposed to support mode transformation among multiple density levels. The experimental results show 236% endurance improvement for single-tier cell morphing and 209% for two-tier cell morphing with 2% low-density page percentage, when compared with the most related work.

Read Optimization Enables Ultralow Resistance Drift for Phase Change Memory

Exploiting Resistance Drift Characteristics to Improve Reliability of LDPC-Assisted Phase-Change Memory

Understanding Phase-Change Materials with Unexpectedly Low Resistance Drift for Phase-Change Memories

Enhancing the Data Reliability of Multilevel Storage in Phase Change Memory with 2T2R Cell Structure

Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

Optimization Of Write Operation In Phase Change Memory

Unveiling the Structural Origin to Control Resistance Drift in Phase-Change Memory Materials

Wear Relief for High-Density Phase Change Memory Through Cell Morphing Considering Process Variation

Exploiting Content Locality to Improve the Performance and Reliability of Phase Change Memory

Speeding Up the Write Operation for Multi-Level Cell Phase Change Memory with Programmable Ramp-Down Current Pulses.

Enhancing the Performance of Phase Change Memory for Embedded Applications

Carbon Layer Application in Phase Change Memory to Reduce Power Consumption and Atomic Migration

Hybrid Program Algorithm Enables Significant Reduction in Write Latency and Power Consumption for Multilevel Phase Change Memory

Write Energy Reduction for PCM via Pumping Efficiency Improvement.

Nonideality Suppression and 16-State Multilevel Cell Storage Optimization in Phase Change Memory With Linear-Like Circuit

Role of an encapsulating layer for reducing resistance drift in phase change random access memory

Subthreshold Read Operations in 3D PCM

Enhanced Readout Reliability in Phase Change Memory with a Dual-Sensing-Margin Offset-Compensated Sense Amplifier

Design Methodologies for Reliable and Energy-efficient PCM Systems

Leveling to the Last Mile: Near-zero-cost Bit Level Wear Leveling for PCM-based Main Memory

Enhanced Read Performance For Phase Change Memory Using A Reference Column