Abstract:Multilevel cell (MLC) phase change memory (PCM) shows great potential in terms of capacity and cost compared with single-level cell (SLC) PCM by storing multiple bits in one physical PCM cell. However, poor write performance is a huge challenge for MLC PCM. In general, write latency of MLC PCM is 10 to 100X longer compared with DRAM technology. Considerable write latency greatly degrades the overall system performance and restricts the application of MLC PCM. Actually, several chips compose a memory DIMM to match the wide interface of data bus. The data of a write request, i.e., a cache line block, are distributed to multiple PCM chips. As a result, the write service time is determined by the chips with the most data amount. Conventional PCM write schemes do not care for the modified-byte distribution among PCM chips and it just waits for the completion of the chip with the most amount of data. However, it is observed that (1) the conventional PCM write scheme suffers from unbalanced modified-byte distribution that some PCM chips bear too many modified bytes while some chips are kept idle for long times. (2) The modified-byte distribution shows some unique patterns that some bytes are changed more frequently compared with others. (3) MLC PCM shows significant asymmetry considering only MSB or LSB transitions. Based on these observations, in order to solve the poor write problem of PCM, this article presents a novel PCM write scheme called PCM-2R. The key ideas behind our proposed scheme are to reshape the data to evenly distribute the cache line blocks among all chips based on their modified-byte distribution pattern to avoid unbalanced distribution and then remap modified bytes to fast region after decoupling MLC PCM cells considering the state transition asymmetries. The evaluation results show that PCM-2R achieves 51% read latency reduction, 37% write latency reduction, 1.9X IPC improvement, 41% running time reduction, 2.2X throughout improvement, and 52% energy reduction compared with the baseline. Moreover, compared with the state-of-the-art write schemes, PCM-2R achieves 0.2X more IPC improvement and 0.2X throughout improvement.

Exploiting Resistance Drift Characteristics to Improve Reliability of LDPC-Assisted Phase-Change Memory

Read Optimization Enables Ultralow Resistance Drift for Phase Change Memory

Enhancing the Data Reliability of Multilevel Storage in Phase Change Memory with 2T2R Cell Structure

Eldpc: an Efficient LDPC Coding Scheme for Phase-Change Memory

Nonideality Suppression and 16-State Multilevel Cell Storage Optimization in Phase Change Memory With Linear-Like Circuit

Increasing Endurance and Security of Phase-Change Memory with Multi-Way Wear-Leveling

Wear Relief for High-Density Phase Change Memory Through Cell Morphing Considering Process Variation

Balancing the Lifetime and Storage Overhead on Error Correction for Phase Change Memory

Unveiling the Structural Origin to Control Resistance Drift in Phase-Change Memory Materials

Exploiting Content Locality to Improve the Performance and Reliability of Phase Change Memory

Improving MLC PCM Write Throughput by Write Reconstruction.

Role of an encapsulating layer for reducing resistance drift in phase change random access memory

Understanding Phase-Change Materials with Unexpectedly Low Resistance Drift for Phase-Change Memories

Security Rbsg: Protecting Phase Change Memory With Security-Level Adjustable Dynamic Mapping

Exploring Dynamic Redundancy to Resuscitate Faulty PCM Blocks

Improving Reliability of Non-Volatile Memory Technologies Through Circuit Level Techniques and Error Control Coding

Efficient Wear Leveling for PCM/DRAM-Based Hybrid Memory.

A Novel Design for Multilevel Storage and Superb Reliability in Phase-Change Memory

Write Reconstruction for Write Throughput Improvement on Mlc Pcm Based Main Memory

PCM-2R: Accelerating MLC PCM Writes Via Data Reshaping and Remapping

Multi-Tiered Approach to Improving the Reliability of Multi-Level Cell Pram