Abstract:Dynamic random access memory (DRAM) is being upgraded iteratively, and as a result, its transmission rate and bandwidth are rising quickly. Simultaneously, as the DRAM process has advanced, the storage cell size has decreased and cell integration has improved within each device, leading to a significant boost in storage capacity and density. DRAM has been widely utilized as a crucial storage component in personal computers, mobile devices, servers, and data centers because of these benefits. However, data reliability is greatly hampered by DRAM’s vulnerability to single-bit, row, and column errors, which result in data loss and corruption as well as the possibility of system crashes and downtime. Error correction codes (ECC) are used by DRAM to protect data and increase reliability, but because large capacity DRAM is more prone to multi-bit errors of cross-chip. Traditional error correction strategies are unable to keep up with the demand for multi-bit errors of cross-chip. Therefore, a crucial problem that needs to be solved is the design of an ECC strategy with robust error correction capabilities. A high order ECC scheme with stronger error correcting capability is developed at a higher firmware layer without changing the hardware architecture to address reliability issues brought by DRAM multi-bit errors of cross-chip. The higher order ECC technique is then used to gain a stronger error correction capability while minimizing the latency overhead when an uncorrectable error is discovered by rank-level ECC (RECC). The error correction performance of the proposed high order ECC algorithm is evaluated and verified using simulation experiments in terms of both error correction capability and encoding/decoding latency. Simulation results show that compared with existing ECC schemes, the proposed high order ECC scheme for DRAM reduces latency by 69% and storage overhead by 5.56%. The proposed high order ECC method has significant research implications and is useful in preventing data loss and enhancing DRAM reliability.

Multi-Tiered Approach to Improving the Reliability of Multi-Level Cell Pram

A Low Cost Multi-Tiered Approach to Improving the Reliability of Multi-Level Cell Pram

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Cost-Effective Design Solutions for Enhancing PRAM Reliability and Performance

ASAP: an Efficient and Reliable Programming Algorithm for Multi-level RRAM Cell

Low Cost ECC Schemes for Improving the Reliability of DRAM+PRAMMAIN Memory Systems

Balancing the Lifetime and Storage Overhead on Error Correction for Phase Change Memory

Exploring Dynamic Redundancy to Resuscitate Faulty PCM Blocks

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A Novel Design for Multilevel Storage and Superb Reliability in Phase-Change Memory

Self-Terminating Write of Multi-Level Cell ReRAM for Efficient Neuromorphic Computing

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Methods to Realize Low-BER and High-Reliability RRAM Chip With Fast Page-Forming Capability

Speeding Up the Write Operation for Multi-Level Cell Phase Change Memory with Programmable Ramp-Down Current Pulses.

Analysis of Influencing Factors on Multilevel Storage Performance in Phase-Change Random Access Memory

A Novel Page-Forming Scheme with Ultra-Low Bit-Error-Rate and High Reliability on a 1mb RRAM Chip

Enhancing the Data Reliability of Multilevel Storage in Phase Change Memory with 2T2R Cell Structure

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Improving DRAM Reliability Using a High Order Error Correction Code

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