Abstract:Storage-class memory (SCM) combines the benefits of a solid-state memory, such as high-performance and robustness, with the archival capabilities and low cost of conventional hard-disk magnetic storage. Among candidate solid-state nonvolatile memory technologies that could potentially be used to construct SCM, flash memory is a well-established technology and have been widely used in commercially available SCM incarnations. Flash-based SCM enables much better tradeoffs between performance, space and power than disk-based systems. However, write endurance is a significant challenge for a flash-based SCM (each act of writing a bit may slightly damage a cell, so one flash cell can be written 10^4--10^5 times, depending on the flash technology, before it becomes unusable). This is a well-documented problem and has received a lot of attention by manufactures that are using some combination of write reduction and wear-leveling techniques for achieving longer lifetime. In an effort to improve flash lifetime, first, by quantifying data longevity in an SCM, we show that a majority of the data stored in a solid-state SCM do not require long retention times provided by flash memory (i.e., up to 10 years in modern devices); second, by exploiting retention time relaxation, we propose a novel mechanism, called Dense-SLC (D-SLC), which enables us perform multiple writes into a cell during each erase cycle for lifetime extension; and finally, we discuss the required changes in the flash management software (FTL) in order to use this characteristic for extending the lifetime of the solid-state part of an SCM. Using an extensive simulation-based analysis of a flash-based SCM, we demonstrate that D-SLC is able to significantly improve device lifetime (between 5.1X and 8.6X) with no performance overhead and also very small changes at the FTL software.

Exploit Asymmetric Error Rates of Cell States to Improve the Performance of Flash Memory Storage Systems

Error Characterization, Mitigation, and Recovery in Flash Memory Based Solid-State Drives

LSB Page Refresh Based Retention Error Recovery Scheme for MLC NAND Flash

Exploiting Error Characteristic to Optimize Read Voltage for 3-D NAND Flash Memory

Study of a Phenomenon of High Error WL in Mixed Read and Program Operations in 3-D NAND Flash

Experimental Characterization, Optimization, and Recovery of Data Retention Errors in MLC NAND Flash Memory

Performance Enhancement of NAND Flash Using Unequal Error Protection.

Adaptive Energy-Aware Design Of A Multi-Bank Flash-Memory Storage System

Data-Aware 3-D TLC NAND flash Memory Reliability Optimization

Exploiting Asymmetric Errors for LDPC Decoding Optimization on 3D NAND Flash Memory

Enhancing the Reliability of MLC NAND Flash Memory Systems by Read Channel Optimization

An Efficient Dynamic Wear Leveling for Huge-Capacity Flash Storage Systems with Cache.

Architectural Techniques for Improving NAND Flash Memory Reliability

Exploiting Data Longevity for Enhancing the Lifetime of Flash-based Storage Class Memory

Exploit Imbalanced Cell Writes to Mitigate Write Disturbance in Dense Phase Change Memory

Read Disturb Errors in MLC NAND Flash Memory

Data Pre-Emphasis Based Retention Reliability Enhance Scheme For Mlc Nand Flash Memories

Rate-Adaptive Protograph LDPC Codes for Multi-Level-Cell NAND Flash Memory.

A Latency-Aware Garbage Collection Strategy

LIAD: A Method for Extending the Effective Time of 3-D TLC NAND Flash Hard Decision

A Unified Write Buffer Cache Management Scheme for Flash Memory