Abstract:The noises at the power lines limit the charge pump to provide large instantaneous current to PCM cells, which results in the number of bits can be written concurrently, i.e. the size of write unit, is restricted in PCM. When implementing PCM as the main memory, the inequality of cache line's size and write unit's size may result in many consecutive executed write units, which greatly decreases the system performance. Existing PCM write schemes, however, consider the worst power and time cases of written data, and ignore the actual current consumption. It is assumed that all data bits are changed and the electric current of each data unit is under fully utilized. The write performance is blocked due to pessimistic estimates, i.e. the current is often excessively supplied but is not used effectively, which leads to huge energy consumption. As a result, the write parallelism is limited and therefore restricts the overall system performance. To address this problem, this paper proposes a novel PCM write scheme named Tetris Write to explore more write parallelism and reduce the critical number of write units in PCM chip. The key idea behind Tetris Write is to monitor the number of '1' and '0' changed in each data unit, and schedule the order of data units' write-1 and write-0 execution considering not only the time and power asymmetries, but also the number asymmetry between RET and SET operations, to allow a larger number of concurrent bit-writes and make the best use of power supply. Tetris Write tries to schedule the dominating long term write-1s first and attempts to steal interspaces remained by write-1s to put the extraessential short write-0s. 4-core PARSEC benchmarks' results show that Tetris Write can get 65% read latency reduction, 40% write latency reduction, 46% running time reduction and 2X IPC improvement compared with the baseline on average. In addition, Tetris Write earns 26%, 15% and 10% more read latency reduction, 15%, 7% and 5% more write latency reduction, and outperforms 22%, 12% and 7% more running time reduction, compared with the state-of-the-art Flip-N-Write, 2-Stage-Write and Three-Stage-Write schemes, whose IPC improvements are 1.4X, 1.6X and 1.8X, respectively.

A three-stage-write scheme with flip-bit for PCM main memory

PCM-2R: Accelerating MLC PCM Writes Via Data Reshaping and Remapping

A Novel Memory Block Management Scheme for PCM Using WOM-Code

MaxPB: Accelerating PCM Write by Maximizing the Power Budget Utilization.

Improving MLC PCM Write Throughput by Write Reconstruction.

Write Reconstruction for Write Throughput Improvement on Mlc Pcm Based Main Memory

Tetris Write: Exploring More Write Parallelism Considering PCM Asymmetries

Write Energy Reduction for PCM via Pumping Efficiency Improvement.

Optimization Of Write Operation In Phase Change Memory

Speeding Up the Write Operation for Multi-Level Cell Phase Change Memory with Programmable Ramp-Down Current Pulses.

Time and Space-Efficient Write Parallelism in PCM by Exploiting Data Patterns

PCM-FTL: A Write-Activity-Aware NAND Flash Memory Management Scheme for PCM-Based Embedded Systems

Hybrid Program Algorithm Enables Significant Reduction in Write Latency and Power Consumption for Multilevel Phase Change Memory

Write-Aware Memory Management in PCM-Based Hybrid Memory Systems

Efficient Space Management and Wear Leveling for PCM-Based Storage Systems.

Energy-efficient Multi-Level Cell Phase-Change Memory System with Data Encoding.

Increasing PCM Lifetime by Using Pipelined Pseudo-Random Encoding Algorithm

Enabling Fine-Grain Restricted Coset Coding Through Word-Level Compression for PCM

A Partition-based Mechanism for Reducing Energy in Phase Change Memory.

Leveling to the Last Mile: Near-zero-cost Bit Level Wear Leveling for PCM-based Main Memory

Optimizing Scheduling in Embedded CMP Systems with Phase Change Memory