Abstract:Phase change RAM (PRAM) is an emerging memory technology that has fast read access time, low standby power, and high storage density. Multi-level Cell (MLC) PRAM has even higher storage density but suffers from low reliability and long write latency. This paper investigates a set of cost-effective design solutions for enabling MLC PRAM to be used as a mainstream memory technology. Earlier, we had proposed a multi-level scheme to improve reliability through circuit level and architecture level tuning-the corresponding scheme is referred to as baseline. In this paper, we show how tuning the programming current profile at the device level helps reduce the error rates even further and enables the use of an even lower cost error control coding (ECC) to achieve the same level of reliability. We use a PRAM thorn DRAM hybrid memory configuration to analyze the tradeoffs between programming energy, IPC, and memory lifetime. We show that for the SPEC2006 and DeCapo benchmarks, a hybrid memory designed with 1 GB PRAM and 8 MB DRAM can achieve either longer lifetime or lower energy (compared to the baseline scheme) by tuning the programming current profile. For instance, if a BCH (t = 2) ECC unit is used, we can increase RESET programming pulse width to enhance memory lifetime by a factor of 10; for a fixed memory lifetime constraint of 10 6 PRAM WRITE cycles, we can tune the programming current profile to achieve 27 percent memory energy saving with no loss in IPC.

Optimal Design of Phase Change Random Access Memory Based on 130nm Cmos Technology

Circuit Design for 128mb PCRAM Based on 40nm Technology

An 8 Mb Phase Change Random Access Memory Based on 0.13 Μm Technology

Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

Investigations On Non Volatile And Non Rotational Phase Change Random Access Memory

Phase Transition Behaviors of Ga30Sb70/Sb80Te20 Nanocomposite Multilayer Films for Application in Phase Change Random Access Memory

Optimization of Periphery Circuits in a 1K-Bit PCRAM Chip for Highly Reliable Write and Read Operations.

Fullerene Thermal Insulation for Phase Change Memory

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process

Optimization of A Pcram Chip for High-Speed Read and Highly Reliable Reset Operations

Universal memory based on phase change materials: from phase change random access memory to optoelectronic hybrid storage

Analysis of Influencing Factors on Multilevel Storage Performance in Phase-Change Random Access Memory

Understanding of Thermal Engineering for Vertical Nanowire Phase-Change Random Access Memory Partially Wrapped by Low-Conductivity Layer

Universal Memory Based on Phase-Change Materials: from Phase-Change Random Access Memory to Optoelectronic Hybrid Storage*

Cost-Effective Design Solutions for Enhancing PRAM Reliability and Performance

Design and Realization of a 0.13 Μm 1 Mb Resistive Random Access Memory

A design of access-diode-array in phase change Random Access memory

Study of geometric effect on phase change random access memory

Sb-rich Si–Sb–Te Phase-Change Material for Phase-Change Random Access Memory Applications

Full Integration of Highly Reliable Phase Change Memory with Advanced Ring Type Bottom Electrode Contact