Microscopic Mechanism of Carbon-Dopant Manipulating Device Performance in CGeSbTe-Based Phase Change Random Access Memory
Yan Cheng,Daolin Cai,Yonghui Zheng,Shuai Yan,Lei Wu,Chao Li,Wenxiong Song,Tianjiao Xin,Shilong Lv,Rong Huang,Hangbing Lv,Zhitang Song,Songlin Feng
DOI: https://doi.org/10.1021/acsami.0c02507
IF: 9.5
2020-01-01
ACS Applied Materials & Interfaces
Abstract:Carbon (C)-doped Ge2Sb2Te5 material is a potential candidate in phase change random access memory (PCRAM) because of its superb thermal stability and ultrahigh cycle endurance. Unfortunately, the role and distribution evolution of C-dopant is still not fully understood, especially in practical industrial devices. In this report, with the aid of advanced spherical aberration corrected transmission electron microscopy, the mechanism of microstructure evolution manipulated by C-dopant is clearly defined. The grain-inner C atoms distinctly increase cationic migration energy barriers, which is the fundamental reason for promoting the thermal stability of metastable face-centered-cubic phase and postponing its transition to the hexagonal structure. By current pulses stimulation, the stochastic grain-outer C clusters tend to aggregate in the active area by breaking C-Ge bonding; thus, grain growth and elemental segregation are effectively suppressed to improve device reliability, for example, lower SET resistance, shorter SET time, and enlarged RESET/SET ratio. In short, the visual distribution variations of C-dopant can manipulate the performance of the PCRAM device, having much broader implications for optimizing its microstructure transition and understanding C-doped material system.