Abstract:Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary mechanism for data storage is thermal excitation. However, there is a limited body of research regarding the thermal properties of PCMs at length scales close to the memory cell dimension and, thus, the impact of interfaces on PCM operation is unknown. Our work presents a new paradigm to manage thermal transport in memory cells by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating layers. Experimental measurements show a substantial change in thermal boundary resistance as GST transitions from one crystallographic structure (cubic) to another (hexagonal) and as the thickness of tungsten contacts is reduced from five to two nanometers. Simulations reveal that interfacial resistance between the phase change unit and its adjacent layer can reduce the reset current for 20 and 120 nm diameter devices by up to ~40% and ~50%, respectively. The resultant phase-dependent and geometric effects on thermal boundary resistance dictate that the effective thermal conductivity of the phase change unit can be reduced by a factor of four, presenting a new opportunity to reduce operating currents in PCMs.

Fullerene Thermal Insulation for Phase Change Memory

Electrothermal Simulation of Single-Walled Carbon Nanotube (Swcnt)-Based Phase Change Memory for 3-Dics

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Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs

Understanding of Thermal Engineering for Vertical Nanowire Phase-Change Random Access Memory Partially Wrapped by Low-Conductivity Layer

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Investigation on non-rotating and non-volatile phase change memory

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Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

Investigation of Nano-Phase Change for Phase Change Random Access Memory

Superlatticelike Dielectric As A Thermal Insulator for Phase-Change Random Access Memory

Thermal Analysis and Structural Design of Phase Change Random Access Memory

Investigations On Non Volatile And Non Rotational Phase Change Random Access Memory

The “gene” of reversible phase transformation of phase change materials: Octahedral motif

Multi‐bit Storage in Reset Process of Phase Change Access Memory (PRAM)

Migration Techniques in HPC Environments

Method of Manufacturing Phase-Change Memory Device Having High Thermal Efficiency through New Etching Condition

Phase Change Random Access Memory Cell With Superlattice-Like Structure

Nano-composite phase-change antimony thin film for fast and persistent memory operations