Abstract:Further performance improvement is necessary for resistive random access memory (RRAM) to realize its commercialization. In this work, a novel pulse operation method is proposed to improve the performance of RRAM based on Ti/HfO2/Pt structure. In the DC voltage sweep of the RRAM device, the SET transition is abrupt under positive bias. If current sweep with positive bias is utilized in SET process, the SET switching will become gradual, so SET is current controlled. In the negative voltage sweep for RESET process, the change of current with applied voltage is gradual, so RESET is voltage controlled. Current sweep SET and voltage sweep RESET shows better controllability on the parameter variation. Considering the SET/RESET characteristics in DC sweep, in the corresponding pulse operation, the width and height of the pulse series can be adjusted to control the SET and RESET process, respectively. Our new method is different from the traditional pulse operation in which both the width and height of program/erase pulse are simply kept constant which would lead to unnecessary damage to the device. In our new method, in each program or erase operation, a series of pulses with the width/height gradually increased are made use of to fully finish the SET/RESET switching but no excessive stress is generated at the same time, so width/height-controlled accurate SET/RESET can be achieved. Through the operation, the uniformity and endurance of the RRAM device has been significantly improved.

Design of Pulsed Current Source for Set/Reset Operation of Phase-change Memory Cells

Low-Voltage and Low-Current Flash Memory Using Source Induced Band-to-Band Tunneling Hot Electron Injection to Perform Programming

Interface Engineering to Enhance Phase Change Memory Programmability

Localization of Joule Heating in Phase-Change Memory With Incorporated Nanostructures and Nanolayer for Reducing Reset Current

Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

A High Speed Asymmetric T-Shape Cell in Nmos-Selected Phase Change Memory Chip

Investigation on non-rotating and non-volatile phase change memory

Significant Power Consumption Reduction and Speed Boosting in Phase Change Memory with Nanocurrent Channels

Study on nucleation characteristic of phase change memory set operation using numerical simulation

Programming Resistive Switching Memory by A Charged Capacitor

Impact of program/erase operation on the performances of oxide-based resistive switching memory.

Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power

A NOVEL SELF-ADAPTIVE WORDLINE VOLTAGE GENERATOR FOR HIGH OPERATIONAL RELIABILITY IN PHASE CHANGE MEMORY

Interface Engineering Via MoS2 Insertion Layer for Improving Resistive Switching of Conductive‐Bridging Random Access Memory

Edge Contact Lateral Phase Change Ram With Superlattice-Like Phase Change Medium

Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire

Breaking the Speed Limits of Phase-Change Memory

Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power

Electrothermal Coupling and Threshold-Switching Simulation Study on Phase Change Memory (PCM) Cell

Nonvolatile Phase Change Memory Nanocell Fabrication By Femtosecond Laser Writing Assisted With Near-Field Optical Microscopy

Progress in Development of Resistive RAM Peripheral Circuit