Programming Resistive Switching Memory by A Charged Capacitor

Sen Zhang,Qi Liu,Wei Wang,Hangbing Lv,Qingyun Zuo,Yan Wang,Yingtao Li,Wentai Lian,Shibing Long,Qin Wang,Ming Liu
DOI: https://doi.org/10.1007/s00339-011-6320-5
2011-01-01
Abstract:Resistive switching memory is a very promising technology for emerging nonvolatile memory applications. Generally, the switching behavior is triggered by a sweep or pulse voltage. In this paper, a charged capacitor is proposed to be used as the external electrical source to program a resistive switching element. From theoretical analyses based on a set behavior model, the capacitor approach can program the device efficiently. Compared with sweep or pulse mode, capacitor driving method can greatly reduce over-programming after the set event, and thus improve the resistance uniformity. The experimental results performed on Cu/ZrO2:Cu/Pt device support this conclusion quite well. The proposed methodology has great value for achieving a reliable resistive switching, which is important for high density or embedded application such as memory, FPGA, DSP, and even neuromorphic systems.
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