Capacitive and Inductive Characteristics of Volatile Perovskite Resistive Switching Devices with Analog Memory

Cedric Gonzales,Agustín Bou,Antonio Guerrero,Juan Bisquert
DOI: https://doi.org/10.1021/acs.jpclett.4c00945
IF: 6.888
2024-06-14
The Journal of Physical Chemistry Letters
Abstract:With the increasing demands and complexity of the neuromorphic computing schemes utilizing highly efficient analog resistive switching devices, understanding the apparent capacitive and inductive effects in device operation is of paramount importance. Here, we present a systematic array of characterization methods that unravel two distinct voltage-dependent regimes demonstrating the complex interplay between the dynamic capacitive and inductive effects in volatile perovskite-based memristors:...
chemistry, physical,physics, atomic, molecular & chemical,nanoscience & nanotechnology,materials science, multidisciplinary
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