Abstract:Extensive calculations based on density functional theory have been carried out to understand the origin of magnetism in undoped ZnO thin films as found in recent experiments. The observed magnetism is confirmed to be due to Zn, instead of O, vacancy. The main source of the magnetic moment, however, arises from the unpaired 2p electrons at O sites surrounding the Zn vacancy with each nearest-neighbor O atom carrying a magnetic moment ranging from 0.490 to 0.740 mu(B). Moreover, the study of vacancy-vacancy interactions indicates that in the ground state, the magnetic moments induced by Zn vacancies prefer to ferromagnetically couple with the anti ferromagnetic state lying 44 meV higher in energy. Since this is larger than the thermal energy at room temperature, the ferromagnetic state can be stable against thermal fluctuations. Calculations and discussions are also extended to ZnO nanowires that have larger surface to volume ratio. Here, the Zn vacancies are found to lead to the ferromagnetic state too. The present theoretical study not only demonstrates that ZnO samples can be magnetic even without transition-metal doping but also suggests that introducing Zn vacancy is a natural and an effective way to fabricate magnetic ZnO nanostructures. In addition, vacancy mediated magnetic ZnO nanostructures may have certain advantages over transition-metal doped systems in biomedical applications.

Oxygen Vacancy-Induced Ferromagnetism In Un-Doped Zno Thin Films

Defect-induced Magnetism in Undoped Wide Band Gap Oxides: Zinc Vacancies in ZnO As an Example

Substrate Effect on the Room-Temperature Ferromagnetism in Un-Doped ZnO Films

Ferromagnetism Induced by Oxygen-Vacancy Complex in (mn, In) Codoped ZnO

Zn vacancy induced ferromagnetism in K doped ZnO

Vacancy-induced Magnetism in ZnO Thin Films and Nanowires

Origin of the Defects-Induced Ferromagnetism in Un-Doped ZnO Single Crystals

Zn Vacancy Induced Room-Temperature Ferromagnetism in Mn-Doped Zno

Room-temperature Ferromagnetism in Un-Doped ZrO2 Thin Films

Oxygen Enhanced Ferromagnetism in Cr-doped ZnO Films

Effect Of Oxygen Deficiency On Room Temperature Ferromagnetism In Co Doped Zno

Defect Characterization and Magnetic Properties in Un-Doped Zno Thin Film Annealed in A Strong Magnetic Field

Experimental and Theoretical Analyses of Zinc-Vacancy-Induced Room-Temperature Ferromagnetism in ZnO Films

Origin of Ferromagnetism in Zn-doped SnO2 from First-Principles Study

Role of Oxygen Vacancies in the Origin of Ferromagnetism in Mn‐doped ZnO

Effect of Oxygen Vacancy Defect on the Magnetic Properties of Co-Doped Zno Diluted Magnetic Semiconductor

Defect-induced Ferromagnetism in Insulating Mn–P Codoped ZnO Grown in Oxygen-Rich Environment

Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO.

Unexpected ferromagnetism in n-type polycrystalline K-doped ZnO films prepared by RF-magnetron sputtering

Enhanced Room-Temperature Ferromagnetism in Un-Doped ZnO Thin Films by Thermal Annealing in a Strong Magnetic Field

Defect Related Room Temperature Ferromagnetism in N-implanted ZnO Film