Abstract:We analysed the variation and effect of oxygen vacancies on the structural, dielectric and magnetic properties in case of Mn (4%) and Co (1, 2 and 4%) co-doped ZnO nanoparticles (NPs), synthesized by chemical precipitation route and annealed at 750 °C for 2 h. From the XRD, the calculated average crystallite size increased from15.30 ± 0.73 nm to 16.71 ± 012 nm, when Co content is increased from 1 to 4%. Enhancement of dopants (Mn, Co) introduced more and more oxygen vacancies to ZnO lattice confirmed from EDX and XPS. The high-temperature annealing leads to reduction of the dielectric properties due to enhancement in grain growth (large grain volume and lesser number of grain boundaries) with the incorporation of Co and Mn ions into the ZnO lattice. The electrical conductivity of the Mn doped and (Mn, Co) co-doped ZnO samples were enhanced due to increase in the volume of conducting grains and charge density (liberation of trapped charge carriers in oxygen vacancies and free charge carriers at higher frequencies). The Mn-doped and (Mn, Co) co-doped ZnO NPs show ferromagnetic (FM) behaviour. The saturation and remnant magnetizations (Ms and Mr) elevates from (0.235 to 1.489) × 10−2 and (0.12 to 0.27) × 10−2 emu/g while Coercivity (Hc) reduced from 97 to 36 Oe with enhancement in the concentration of dopants in ZnO matrix. Oxygen vacancies were found to be the main reason for room-temperature ferromagnetism (RTFM) in the doped and co-doped ZnO NPs. The results show that the enhanced dielectric and magnetic properties of Mn doped and (Mn, Co) co-doped ZnO is strongly correlated with the concentration of oxygen vacancies. The observed enhanced RTFM, dielectric properties and electrical conductivity makes TM doped ZnO nanoparticles suitable for spintronics, microelectronics and optoelectronics based applications.

Ferromagnetism Induced by Oxygen-Vacancy Complex in (mn, In) Codoped ZnO

Evidence Of The Defect-Induced Ferromagnetism In Na And Co Codoped Zno

Zn vacancy induced ferromagnetism in K doped ZnO

Role of Oxygen Vacancies in the Origin of Ferromagnetism in Mn‐doped ZnO

Oxygen Vacancy-Induced Ferromagnetism In Un-Doped Zno Thin Films

Defect-induced Magnetism in Undoped Wide Band Gap Oxides: Zinc Vacancies in ZnO As an Example

Zn Vacancy Induced Room-Temperature Ferromagnetism in Mn-Doped Zno

Ferromagnetism Induced by Defect Complex in Co-doped ZnO

Oxygen vacancies induced room temperature ferromagnetism and enhanced dielectric properties in Co and Mn co-doped ZnO nanoparticles

Origin of Ferromagnetism in Zn-doped SnO2 from First-Principles Study

Influence of oxygen vacancies on the structural, dielectric, and magnetic properties of (Mn, Co) co-doped ZnO nanostructures

Defect-induced Ferromagnetism in Insulating Mn–P Codoped ZnO Grown in Oxygen-Rich Environment

Activation of Room-Temperature Ferromagnetism in Mn Doped Zno Thin Films by N Codoping

Role of oxygen vacancies in V-doped ZnO diluted magnetic semiconductors

Oxygen Enhanced Ferromagnetism in Cr-doped ZnO Films

Structure, Optical, and Magnetic Properties of Sputtered Manganese and Nitrogen-Codoped ZnO Films

Influences of the Type of Dopant and Substrate on Ferromagnetism in ZnO:Mn

Electronic Structure and Magnetic Properties of （mn, N）-codoped ZnO

O-vacancy-mediated Spin-Spin Interaction in Co-doped ZnO: First-principles Total-Energy Calculations

Vacancy-induced Magnetism in ZnO Thin Films and Nanowires

Effect of Oxygen Vacancy Defect on the Magnetic Properties of Co-Doped Zno Diluted Magnetic Semiconductor