Abstract:Magnetic ZnO, one of the most important diluted magnetic semiconductors (DMS), has attracted great scientific interest because of its possible technological applications in optomagnetic devices. Magnetism in this material is usually delicately tuned by the doping level, dislocations, and local structures. The rational control of magnetism in ZnO is a highly attractive approach for practical applications. Here, the tuning effect of biaxial strain on the d(0) magnetism of native imperfect ZnO is demonstrated through first-principles calculations. Our calculation results show that strain conditions have little effect on the defect formation energy of Zn and O vacancies in ZnO, but they do affect the magnetism significantly. For a cation vacancy, increasing the compressive strain will obviously decrease its magnetic moment, while tensile strain cannot change the moment, which remains constant at 2 μB. For a singly charged anion vacancy, however, the dependence of the magnetic moment on strain is opposite to that of the Zn vacancy. Furthermore, the ferromagnetic state is always present, irrespective of the strain type, for ZnO with two zinc vacancies, 2VZns. A large tensile strain is favorable for improving the Curie temperature and realizing room temperature ferromagnetism for ZnO-based native semiconductors. For ZnO with two singly charged oxygen vacancies, 2Vs, no ferromagnetic ordering can be observed. Our work points the way to the rational design of materials beyond ZnO with novel non-intrinsic functionality by simply tuning the strain in a thin film form.

Vacancy-induced Magnetism in ZnO Thin Films and Nanowires

Zn vacancy induced ferromagnetism in K doped ZnO

Defect-induced Magnetism in Undoped Wide Band Gap Oxides: Zinc Vacancies in ZnO As an Example

Oxygen Vacancy-Induced Ferromagnetism In Un-Doped Zno Thin Films

Characterization of ZnO:Co particles prepared by hydrothermal method for room temperature magnetism

Origin of Ferromagnetism in Zn-doped SnO2 from First-Principles Study

Modulating Magnetism of ZnO:C with Vacancy and Substitution

Zn Vacancy Induced Room-Temperature Ferromagnetism in Mn-Doped Zno

First-principles Study of the Effect of Vacancies on Magnetic Properties of Zn1 −xcoxo Thin Films

N-Doped Zno Thin Films and Nanowires: Energetics, Impurity Distribution and Magnetism

Theoretical Exploration of the Structural, Electronic, and Magnetic Properties of ZnO Nanotubes with Vacancies, Antisites, and Nitrogen Substitutional Defects

O-vacancy-mediated Spin-Spin Interaction in Co-doped ZnO: First-principles Total-Energy Calculations

Tuning magnetism by biaxial strain in native ZnO

Ferromagnetism Induced by Oxygen-Vacancy Complex in (mn, In) Codoped ZnO

Ferromagnetic behavior of native point defects and vacancy-clusters in ZnO studied by first principle calculation

Role of Oxygen Vacancies in the Origin of Ferromagnetism in Mn‐doped ZnO

Dependence of Magnetism on Doping Concentration in V-Doped Bulk ZnO

Enhancing Magnetic Vacancies in Semiconductors by Strain

Determination Of The Role Of O Vacancy In Co:Zno Magnetic Film

Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO.

Size Effects on Formation Energies and Electronic Structures of Oxygen and Zinc Vacancies in Zno Nanowires: A First-Principles Study