Abstract:Magnetic ZnO, one of the most important diluted magnetic semiconductors (DMS), has attracted great scientific interest because of its possible technological applications in optomagnetic devices. Magnetism in this material is usually delicately tuned by the doping level, dislocations, and local structures. The rational control of magnetism in ZnO is a highly attractive approach for practical applications. Here, the tuning effect of biaxial strain on the d(0) magnetism of native imperfect ZnO is demonstrated through first-principles calculations. Our calculation results show that strain conditions have little effect on the defect formation energy of Zn and O vacancies in ZnO, but they do affect the magnetism significantly. For a cation vacancy, increasing the compressive strain will obviously decrease its magnetic moment, while tensile strain cannot change the moment, which remains constant at 2 μB. For a singly charged anion vacancy, however, the dependence of the magnetic moment on strain is opposite to that of the Zn vacancy. Furthermore, the ferromagnetic state is always present, irrespective of the strain type, for ZnO with two zinc vacancies, 2VZns. A large tensile strain is favorable for improving the Curie temperature and realizing room temperature ferromagnetism for ZnO-based native semiconductors. For ZnO with two singly charged oxygen vacancies, 2Vs, no ferromagnetic ordering can be observed. Our work points the way to the rational design of materials beyond ZnO with novel non-intrinsic functionality by simply tuning the strain in a thin film form.

Zn Vacancy Induced Ferromagnetism in K Doped Zno

Effect of Defects on Room-Temperature Ferromagnetism in Co and Na Co-Doped ZnO

Evidence Of The Defect-Induced Ferromagnetism In Na And Co Codoped Zno

Origin of Ferromagnetism in Zn-doped SnO2 from First-Principles Study

Vacancy-induced Magnetism in ZnO Thin Films and Nanowires

Unexpected ferromagnetism in n-type polycrystalline K-doped ZnO films prepared by RF-magnetron sputtering

Intrinsic Ferromagnetism in Sm Doped Zno

Defect-induced Magnetism in Undoped Wide Band Gap Oxides: Zinc Vacancies in ZnO As an Example

Ferromagnetism Induced by Oxygen-Vacancy Complex in (mn, In) Codoped ZnO

Zn Vacancy Induced Room-Temperature Ferromagnetism in Mn-Doped Zno

Ferromagnetic behavior of native point defects and vacancy-clusters in ZnO studied by first principle calculation

Investigation Of Magnetic Properties Induced By Group-V Element In Doped Zno

Experimental and Theoretical Studies on the Magnetic Property of Carbon-Doped ZnO

Modulating Magnetism of ZnO:C with Vacancy and Substitution

Dependence of Magnetism on Doping Concentration in V-Doped Bulk ZnO

Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO.

Ferromagnetism Induced by Defect Complex in Co-doped ZnO

Oxygen Vacancy-Induced Ferromagnetism In Un-Doped Zno Thin Films

O-vacancy-mediated Spin-Spin Interaction in Co-doped ZnO: First-principles Total-Energy Calculations

Tuning magnetism by biaxial strain in native ZnO

Role of Oxygen Vacancies in the Origin of Ferromagnetism in Mn‐doped ZnO