Zn Vacancy Induced Room-Temperature Ferromagnetism in Mn-Doped Zno

Wensheng Yan,Zhihu Sun,Qinghua Liu,Zhongrui Li,Zhiyun Pan,Jie Wang,Shiqiang Wei,Dan Wang,Yingxue Zhou,Xinyi Zhang
DOI: https://doi.org/10.1063/1.2769391
IF: 4
2007-01-01
Applied Physics Letters
Abstract:X-ray absorption fine structure (XAFS) and first-principles calculations were employed to study the structure and ferromagnetism origin of Zn0.97Mn0.03O thin film grown by metal organic chemical vapor deposition. The magnetization measurements indicate that this sample is ferromagnetic at room temperature. The Mn ions are located at the substitutional Zn sites as revealed by the Mn K-edge XAFS spectroscopy. Moreover, the O K-edge XAFS analysis indicated the existence of numerous Zn vacancies. Based on first-principles calculations, the authors propose that the Zn vacancy can induce the room-temperature ferromagnetism in Mn-doped ZnO.
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