Abstract:We analysed the variation and effect of oxygen vacancies on the structural, dielectric and magnetic properties in case of Mn (4%) and Co (1, 2 and 4%) co-doped ZnO nanoparticles (NPs), synthesized by chemical precipitation route and annealed at 750 °C for 2 h. From the XRD, the calculated average crystallite size increased from15.30 ± 0.73 nm to 16.71 ± 012 nm, when Co content is increased from 1 to 4%. Enhancement of dopants (Mn, Co) introduced more and more oxygen vacancies to ZnO lattice confirmed from EDX and XPS. The high-temperature annealing leads to reduction of the dielectric properties due to enhancement in grain growth (large grain volume and lesser number of grain boundaries) with the incorporation of Co and Mn ions into the ZnO lattice. The electrical conductivity of the Mn doped and (Mn, Co) co-doped ZnO samples were enhanced due to increase in the volume of conducting grains and charge density (liberation of trapped charge carriers in oxygen vacancies and free charge carriers at higher frequencies). The Mn-doped and (Mn, Co) co-doped ZnO NPs show ferromagnetic (FM) behaviour. The saturation and remnant magnetizations (Ms and Mr) elevates from (0.235 to 1.489) × 10−2 and (0.12 to 0.27) × 10−2 emu/g while Coercivity (Hc) reduced from 97 to 36 Oe with enhancement in the concentration of dopants in ZnO matrix. Oxygen vacancies were found to be the main reason for room-temperature ferromagnetism (RTFM) in the doped and co-doped ZnO NPs. The results show that the enhanced dielectric and magnetic properties of Mn doped and (Mn, Co) co-doped ZnO is strongly correlated with the concentration of oxygen vacancies. The observed enhanced RTFM, dielectric properties and electrical conductivity makes TM doped ZnO nanoparticles suitable for spintronics, microelectronics and optoelectronics based applications.

Determination Of The Role Of O Vacancy In Co:Zno Magnetic Film

Effect of Defects on Room-Temperature Ferromagnetism in Co and Na Co-Doped ZnO

Characterization of ZnO:Co particles prepared by hydrothermal method for room temperature magnetism

Influence of Annealing on Microstructure and Magnetic Properties of Co-Sputtered Co-doped ZnO Thin Films

Growth Temperature Dependent Evolutions of Microstructural, Optical and Magnetic Properties of Zn0.75Co0.25O Films

Effect Of Oxygen Deficiency On Room Temperature Ferromagnetism In Co Doped Zno

Effect of Oxygen Vacancy Defect on the Magnetic Properties of Co-Doped Zno Diluted Magnetic Semiconductor

The Role Of Zn Interstitials In Cobalt-Doped Zno Diluted Magnetic Semiconductors

First-principles Study of the Effect of Vacancies on Magnetic Properties of Zn1 −xcoxo Thin Films

O-vacancy-mediated Spin-Spin Interaction in Co-doped ZnO: First-principles Total-Energy Calculations

Influence of N Dopant on the Electric and Magnetic Properties of Co Doped ZnO Thin Films

Preparation of One-Dimensional Diluted Magnetic Semiconducting Cr0.046zn0.954o and Properties Tuning with H-2 Atmospheric Annealing

Oxygen Vacancy-Induced Ferromagnetism In Un-Doped Zno Thin Films

Influence of oxygen vacancies on the structural, dielectric, and magnetic properties of (Mn, Co) co-doped ZnO nanostructures

Effect of Oxygen Partial Pressure on the Local Structure and Magnetic Properties of Co-Doped Zno Films

Substrate-Dependent Magnetization In Co-Doped Zno Insulating Films

Magnetic Property and Spatial Occupation of Co Dopants in Zn<sub>0.98</sub>Co<sub>0.02</sub>O Nanowires

Correlation Between Donor Defects and Ferromagnetism in Insulating Sn1−xCoxO2 Films

Ferromagnetism Induced by Donor-Related Defects in Co-doped ZnO Thin Films

Annealing Temperature Dependence of the Structures and Properties of Co-implanted ZnO Films

Co Location and Valence State Determination in Ferromagnetic Zno : Co Thin Films by Atom-Location-By-Channeling-Enhanced-Microanalysis Electron Energy-Loss Spectroscopy