Abstract:ZnO based diluted magnetic semiconductor particles (ZnO:Co) have been grown using a hydrothermal method with good crystallinity. The atomic percentage of Co presented in the specimen is about 0.01. Based on the x-ray diffraction and high-resolution transition electron, Co is found to be incorporated into ZnO lattice without evidence of obvious Co precipitates. However, from photoluminescence (PL) spectra in the range of 1.94 –3.45eV, a strong broad emission centered around 600nm (2.07eV) in the visible range as well as a relatively weak peak at 2.81eV are observed, indicating the presence of Co impurities. Moreover, intrinsic emissions such as DOX suggest that at least some Co have been doped into ZnO lattice, substituting for Zn2+ ions. The PL results further confirm the substitution of Zn2+ ions by Co, which leads to the changes of the electronic band structures. Magnetism could be realized at room temperature for the ZnO:Co nanoparticles under our experimental conditions although with low coercivity. The field-cooled and zero-field-cooled curves can be explained as a result of competition between the ferromagnetic and the antiferromagnetic ordering in the ZnO:Co nanoparticles. Combining the results from PL and magnetism characterization, it is reasonable to think that both doped Co in the ZnO lattice and Co impurities contribute to magnetism in ZnO:Co nanoparticles at room temperature.

Enhanced Room-Temperature Ferromagnetism in Un-Doped ZnO Thin Films by Thermal Annealing in a Strong Magnetic Field

Substrate Effect on the Room-Temperature Ferromagnetism in Un-Doped ZnO Films

High-Magnetic Field Annealing Effect on Room-Temperature Ferromagnetism Enhancement of Un-Doped Hfo2 Thin Films

Room Temperature Ferromagnetism in ZnO Prepared by Microemulsion

Characterization of ZnO:Co particles prepared by hydrothermal method for room temperature magnetism

Oxygen Vacancy-Induced Ferromagnetism In Un-Doped Zno Thin Films

Room Temperature Magnetic Properties of Zno Nanostructured Films

Annealing rate tuned magnetization level in polycrystalline ZnO:Cu films

Room-temperature Ferromagnetism in Un-Doped ZrO2 Thin Films

Experimental and Theoretical Analyses of Zinc-Vacancy-Induced Room-Temperature Ferromagnetism in ZnO Films

Defect Characterization and Magnetic Properties in Un-Doped Zno Thin Film Annealed in A Strong Magnetic Field

Origin Of Room Temperature Ferromagnetism In Mgo Films

Room Temperature Ferromagnetic Pure Zno

High-temperature Solid State Synthesis and Characterization in Magnetic and Transporting Properties of Zn_xFe_(3-x)O_4 Powder

Enhanced Room Temperature Ferromagnetism in Hydrogenated Zn0.98Mn0.02O

Enhancement of magnetic moment of Er-implanted ZnO films by post-annealing in Ar and vacuum

Enhanced Room Temperature Ferromagnetism in Co-Doped Zno Mediated by Interstitial H

Room-Temperature Ferromagnetism in P-Type (mn, N)-Codoped Zno Thin Films Achieved by Thermal Oxidation of Sputtered Zn3n2 : Mn Films

Influence of Annealing on Microstructure and Magnetic Properties of Co-Sputtered Co-doped ZnO Thin Films

Improved Resistance Switching Stability in Fe-Doped ZnO Thin Films Through Pulsed Magnetic Field Annealing

Room Temperature Ferromagnetism of Ni, (ni, Li), (ni, N)-doped ZnO Thin Films