Substrate Effect on the Room-Temperature Ferromagnetism in Un-Doped ZnO Films

Peng Zhan,Weipeng Wang,Zheng Xie,Zhengcao Li,Zhengjun Zhang,Peng Zhang,Baoyi Wang,Xingzhong Cao
DOI: https://doi.org/10.1063/1.4737881
IF: 4
2012-01-01
Applied Physics Letters
Abstract:Room-temperature ferromagnetism was achieved in un-doped ZnO films on silicon and quartz substrates. Photoluminescence measurement and positron annihilation analysis suggested that the ferromagnetism was originated from singly occupied oxygen vacancies (roughly estimated as ∼0.55 μB/vacancy), created in ZnO films by annealing in argon. The saturated magnetization of ZnO films was enhanced from ∼0.44 emu/g (on quartz) to ∼1.18 emu/g (on silicon) after annealing at 600 °C, as silicon acted as oxygen getter and created more oxygen vacancies in ZnO films. This study clarified the origin of ferromagnetism in un-doped ZnO and provides an idea to enhance the ferromagnetism.
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