Defect Related Room Temperature Ferromagnetism in N-implanted ZnO Film

Juping Xu,Qiang Li,Bingchuan Gu,Jiandang Liu,Bangjiao Ye

DOI: https://doi.org/10.7567/jjapcp.7.011104

2018-01-01

Abstract:Ion implantation was used to introduce N-ions into a ZnO film, which was deposited on sapphire by pulsed-laser deposition. The implantation fluence of N-ions was about 5 × 1016 cm−2. The annealing behavior of ferromagnetism and structures of the N-implanted ZnO sample were determined by a vibrating sample magnetometer and X-ray diffraction, respectively. Positron annihilation spectroscopy and Raman spectroscopy were also employed to investigate the defect conditions in the sample. We observed that room temperature ferromagnetism can be introduced by VZn-related defect-complexes instead of only by substitutional N-ions. The results were supported by ab initio calculations based on density functional theory. Also, the possibility of oxygen vacancies as the origin of the ferromagnetism was clearly ruled out.