Abstract:Interfacial magnetism stimulates the discovery of giant magnetoresistance and spin‐orbital coupling across the heterointerfaces, facilitating the intimate correlation between spin transport and complex magnetic structures. Over decades, functional heterointerfaces composed of nitrides have been seldomly explored due to the difficulty in synthesizing high‐quality nitride films with correct compositions. Here we report the fabrication of single‐crystalline ferromagnetic Fe3N thin films with precisely controlled thicknesses. As film thickness decreased, the magnetization dramatically deteriorated, and the electronic state changed from metallic to insulating. Strikingly, the high‐temperature ferromagnetism was maintained in a Fe3N layer with a thickness down to 2 u. c. (∼8 Å). The magnetoresistance exhibited a strong in‐plane anisotropy; meanwhile, the anomalous Hall resistance reserved its sign when Fe3N layer thickness exceeded 5 u. c. Furthermore, we observed a sizable exchange bias at the interfaces between a ferromagnetic Fe3N and an antiferromagnetic CrN. The exchange bias field and saturation moment strongly depended on the controllable bending curvature using the cylinder diameter engineering technique, implying the tunable magnetic states under lattice deformation. This work provides a guideline for exploring functional nitride films and applying their interfacial phenomena for innovative perspectives toward practical applications. This article is protected by copyright. All rights reserved

Defect-induced Room Temperature Ferromagnetism in Un-Doped InN Film

Effect of Defects on Room-Temperature Ferromagnetism in Co and Na Co-Doped ZnO

Evidence Of The Defect-Induced Ferromagnetism In Na And Co Codoped Zno

Room-Temperature Ferromagnetism In C+-Implanted Aln Films

Defect Related Room Temperature Ferromagnetism in N-implanted ZnO Film

Enhancement of room temperature ferromagnetism in Cu-doped AlN thin film by defect engineering

Defect-induced Magnetism in Undoped Wide Band Gap Oxides: Zinc Vacancies in ZnO As an Example

Grain boundary-driven magnetism in aluminum nitride

Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO.

Density Functional Study on the Ferromagnetism of Alkaline Earth Doped Inn

Experimental observation of ferromagnetism evolution in nanostructured semiconductor InN

Effect of Defects on Magnetic Properties of O+-implanted AlN Films by Positron Annihilation Spectroscopy

Ferromagnetism in Mg-Doped Aln from Ab Initio Study

Decisive Role of the Defect-Clustering Effect in the Variation of Magnetic Order in Diluted Magnetic Binary Metal Oxides

Intrinsic mechanism for high temperature ferromagnetism in GaMnN

Emergent Magnetic States and Tunable Exchange Bias at 3d Nitride Heterointerfaces

Nitrogen Doping-Mediated Room-Temperature Ferromagnetism in Insulating Co-doped SnO2 Films

Ab Initio Study on Electronic Structure and Magnetism of AlN and InSe Monolayer

Ga-vacancy Induced Room Temperature Ferromagnetism Observed in N-irradiated GaN Films

Room-temperature Ferromagnetism Observed in Nd-doped in 2 O 3 Dilute Magnetic Semiconducting Nanowires

Defect Induced Room Temperature Ferromagnetism in High Quality Co-doped ZnO Bulk Samples