Synthesis, Characterization and Modeling of High Quality Ferromagnetic Cr-doped AlN Thin Films

SY Wu,HX Liu,L Gu,RK Singh,L Budd,M van Schilfgaarde,MR McCartney,DJ Smith,N Newman

DOI: https://doi.org/10.1063/1.1570521

IF: 4

2003-01-01

Applied Physics Letters

Abstract:We report a theoretical and experimental investigation of Cr-doped AlN. Density functional calculations predict that the isolated Cr t2 defect level in AlN is 1/3 full, falls approximately at midgap, and broadens into an impurity band for concentrations over 5%. Substitutional Al1−xCrxN random alloys with 0.05⩽x⩽0.15 are predicted to have Curie temperatures over 600 K. Experimentally, we have characterized and optimized the molecular beam epitaxy thin film growth process, and observed room temperature ferromagnetism with a coercive field, Hc, of 120 Oe. The measured magnetic susceptibility indicates that over 33% of the Cr is magnetically active at room temperature and 40% at low temperature.