Room-Temperature Magnetism in Cr-Doped Aln Semiconductor Films

SG Yang,AB Pakhomov,ST Hung,CY Wong
DOI: https://doi.org/10.1063/1.1509475
IF: 4
2002-01-01
Applied Physics Letters
Abstract:Synthesis and characterization of magnetic semiconductors Al1−xCrxN, in which the atomic fraction of chromium x is up to 0.357, are reported. The films, grown by reactive co-sputtering on silicon, glass, and kapton substrates, have a crystal structure of aluminum nitride. Magnetic and transport properties were studied in the temperature range of 50 to 340 K. The materials are in the dielectric regime and have variable-range-hopping type of conductance. The films are ferromagnetic at temperatures over 340 K.
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