Abstract:This article describes progress towards producing prototype magnetoelectronic structures based on III–N semiconductor materials. We focus on the materials properties connected with the key physical phenomena underlying potential spintronic devices: producing, injecting, transporting, manipulating and detecting spin‐polarized electron populations. Our experiments have shown that the maximum magnetic moment is realized for a composition of Ga0.97Cr0.03N and a substrate growth temperature of ∼1050 K. Ion channeling experiments show that ∼90% of Cr sits substitutionally on the cation site. The highest measured magnetization was 1.8μB/Cr atom (∼60% of the expected moment from band theory for ideal material) with the Curie temperature over ∼900 K. This strongly suggests a link between the CrGa impurity band and ferromagnetism and suggests that a double‐exchange‐like mechanism is responsible for the ferromagnetic ordering. The transport properties of spin‐polarized charge carriers were modeled theoretically taking into account both the Elliott–Yafet and the D'yakonov–Perel' scattering mechanisms. We include the spin–orbit interaction in the unperturbed Hamiltonian and treat scattering by ionized impurities and phonons as a perturbation. Our numerical calculations predict two orders of magnitude longer electron spin relaxation times and an order of magnitude shorter hole spin relaxation times in GaN than in GaAs. First‐principles electronic structure calculations predict that efficient spin injection can be achieved using a ferromagnetic GaN:Cr electrode in conjunction with an AlN tunnel barrier. In this structure, the electrode is found to be half‐metallic up to the interface and is thus a candidate for high‐efficiency magnetoelectronic devices. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Characterization of Al(Cr)N and Ga(Cr)N dilute magnetic semiconductors

Synthesis and Characterization of High Quality Ferromagnetic Cr-doped GaN and AlN Thin Films with Curie Temperatures above 900K

Synthesis, Characterization and Modeling of High Quality Ferromagnetic Cr-doped AlN Thin Films

A study of sputtering process for nanocrystalline FeAlN soft magnetic thin films

Observation of Ferromagnetism above 900 K in Cr-GaN and Cr-AlN

Ab Initio Study of Ferromagnetism in Ga 1 − X Cr X N Thin Films

The Role of Cr Substitution on the Ferromagnetic Properties of Ga1−xCrxN

N thin films by density functional calculations

Structural and paramagnetic properties of dilute Ga1-xMnxN

Recent Progress Towards the Development of Ferromagnetic Nitride Semiconductors for Spintronic Applications

Ferromagnetism In Al1-Xcrxn Thin Films By Density Functional Calculations

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Room-Temperature Ferromagnetism In C+-Implanted Aln Films

Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Cr doped III-V nitrides: potential candidates for spintronics

Electronic structure of Ga$_{1-x}$Cr$_{x}$N and Si-doping effects studied by photoemission and X-ray absorption spectroscopy

Room-Temperature Magnetism in Cr-Doped Aln Semiconductor Films

AlN Thin Film Grown on Different Substrates by Hydride Vapor Phase Epitaxy

Study on the Fabrication and Properties of GaN-Based Diluted Magnetic Semiconductors

Magnetic and chemical properties of Cr-based films grown on GaAs(001)