Electronic structure of Ga$_{1-x}$Cr$_{x}$N and Si-doping effects studied by photoemission and X-ray absorption spectroscopy
G. S. Song,M. Kobayashi,J. I. Hwang,T. Kataoka,M. Takizawa,A. Fujimori,T. Ohkouchi,Y. Takeda,T. Okane,Y. Saitoh,H. Yamagami,F.-H. Chang,L. Lee,H.-J. Lin,D. J. Huang,C. T. Chen,S. Kimura,M. Funakoshi,S. Hasegawa,H. Asahi
DOI: https://doi.org/10.1103/PhysRevB.78.033304
2008-05-21
Abstract:The electronic structure of the magnetic semiconductor Ga$_{1-x}$Cr$_{x}$N and the effect of Si doping on it have been investigated by photoemission and soft x-ray absorption spectroscopy. We have confirmed that Cr in GaN is predominantly trivalent substituting for Ga, and that Cr 3$d$ states appear within the band gap of GaN just above the N 2$p$-derived valence-band maximum. As a result of Si doping, downward shifts of the core levels (except for Cr 2$p$) and the formation of new states near the Fermi level were observed, which we attribute to the upward chemical potential shift and the formation of a small amount of Cr$^{2+}$ species caused by the electron doping. Possibility of Cr-rich cluster growth by Si doping are discussed based on the spectroscopic and magnetization data.
Materials Science,Strongly Correlated Electrons