Influence of Strain and Grain Boundary Variations on Magnetism of Cr-doped AlN Films

B. Fan,F. Zeng,C. Chen,Y. C. Yang,P. Y. Yang,F. Pan

DOI: https://doi.org/10.1063/1.3234377

IF: 2.877

2009-01-01

Journal of Applied Physics

Abstract:Cr-doped AlN films are prepared by reactive dc magnetron cosputtering under a negative substrate bias ranging from 50 to 110 V. The bias induces variation of the texture from (002) to (110) orientation, enhances the stress and reduces the grain size in the films. All of the samples are ferromagnetic. The atomic magnetic moment (AMM) of Cr increases with the bias from 50 to 90 V and reaches the maximum of 0.18μB/Cr at a bias of 90 V. As the bias increases further to 110 V, the AMM decreases. The dielectric constant also changes in the same trend with the bias, as well as the AMM does. The variations in these two properties are determined by the collective effects of the lattice deformations induced by the changing stress, the amount of boundary defects and the grain size in the films.