ZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles
Huan Liu,Yue Peng,Genquan Han,Yan Liu,Ni Zhong,Chungang Duan,Yue Hao
DOI: https://doi.org/10.1186/s11671-020-03353-6
2020-05-24
Nanoscale Research Letters
Abstract:Abstract This paper investigates the impacts of post-rapid thermal anneal (RTA) and thickness of ZrO 2 on the polarization P and electrical characteristics of TaN/ZrO 2 /Ge capacitors and FeFETs, respectively. After the RTA ranging from 350 to 500 °C, TaN/ZrO 2 /Ge capacitors with 2.5 and 4 nm-thick amorphous ZrO 2 film exhibit the stable P . It is proposed that the ferroelectric behavior originates from the migration of the voltage-driven dipoles formed by the oxygen vacancies and negative charges. FeFETs with 2.5 nm, 4 nm, and 9 nm ZrO 2 demonstrate the decent memory window (MW) with 100 ns program/erase pulses. A 4-nm-thick ZrO 2 FeFET has significantly improved fatigue and retention characteristics compared to devices with 2.5 nm and 9 nm ZrO 2 . The retention performance of the ZrO 2 FeFET can be improved with the increase of the RTA temperature. An MW of ~ 0.46 V is extrapolated to be maintained over 10 years for the device with 4 nm ZrO 2 .
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology