Abstract:Valence state of Fe ions plays an important role in the physical properties of Fe doped ZnO films. Here, a series of Zn1−xFexO films with different Fe concentrations (x = 0, 2.3, 5.4, 7.1, and 9.3 at. %) were prepared to investigate their structural, piezoelectric, ferroelectric, bipolar resistive switching properties, and electrical-control of ferromagnetism at room temperature. The structure characterizations indicate that the chemical state of Fe ions substituting Zn2+ site changes from Fe3+ to Fe2+ with the increase of Fe dopant concentration. We found enhanced piezoelectric and ferroelectric properties in Zn0.977Fe0.023O films with more Fe3+ due to the smaller Fe3+ ionic size in comparison with Zn2+ while the increase of Fe2+ concentration by a larger amount of Fe dopant results in the worse ferroelectric and piezoelectric performance. All Pt/Zn1−xFexO/Pt devices show bipolar resistive switching properties. Especially, devices with lower Fe dopant concentration exhibit better endurance properties due to their higher crystalline quality. The variation of oxygen vacancies during resistive switching provides an opportunity to tune ferromagnetism of Fe-doped ZnO films, giving rise to the integration of charge and spin into a simple Pt/Zn1−xFexO/Pt devices. The multifunctional properties of Fe-doped ZnO films are promising for communication systems and information storage devices.

Light-induced double enhancement of resistive switching and control of ferromagnetism in ZnO film

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Interplay Between Chemical State, Electric Properties, and Ferromagnetism in Fe-doped ZnO Films

Tunable Resistive Switching Behaviour in Ferroelectric–zno Bilayer Films

Electric-Field Driven Insulator-Metal Transition And Tunable Magnetoresistance In Zno Thin Film

Substrate Effect on the Room-Temperature Ferromagnetism in Un-Doped ZnO Films

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Oxygen Vacancy-Induced Ferromagnetism In Un-Doped Zno Thin Films

Light‐Induced Mott Insulator‐to‐Metal Phase Transition in Ultrathin Intermediate‐Spin Ferromagnetic Perovskite Ruthenates

Magnetoresistance Behavior of Conducting Filaments in Resistive-Switching NiO with Different Resistance States.

Electric-field control of the perpendicular magnetization switching in ferroelectric/ferrimagnet heterostructures

Resistive Switching and Magnetic Modulation in Cobalt-Doped Zno

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Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures

Light modulated magnetism and spin–orbit torque in a heavy metal/ferromagnet heterostructure based on van der Waals-layered ferroelectric materials

Reversible magnetism transition at ferroelectric oxide heterointerface

Role of Oxygen Ion Migration in the Electrical Control of Magnetism in Pt/Co/Ni/HfO2 Films

Effects of electric field and light on resistivity switching for Eu0.7Sr0.3MnO3 thin films

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